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FQP20N60C-VB Product details

Product introduction:

Product Introduction

**FQP20N60C-VB** is a high-performance N-Channel MOSFET in TO220 package. Designed to handle high voltage applications, this MOSFET has a maximum drain-source voltage (VDS) of 650V, making it suitable for circuits that require high voltage handling. Its maximum gate-source voltage (VGS) is ±30V and its threshold voltage (Vth) is 3.5V. The on-resistance (RDS(ON)) of FQP20N60C-VB at VGS = 10V is 160mΩ, ensuring efficient current transmission. The device has a maximum drain current (ID) of 20A and is capable of handling medium current loads. It uses SJ_Multi-EPI technology, which optimizes the switching performance and voltage resistance of the MOSFET, providing higher reliability and efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Model**: FQP20N60C-VB
- **Package**: TO220
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Applications and Modules

The characteristics of the **FQP20N60C-VB** MOSFET make it suitable for multiple high voltage and high power applications:

1. **Switching Power Supplies**: Due to its high voltage tolerance and low on-resistance, the FQP20N60C-VB is an ideal choice for switching power supply designs. It can effectively handle current under high voltage input conditions, optimize power conversion efficiency, and is suitable for various power adapters and industrial power modules.

2. **Motor Drivers**: This MOSFET can be used in motor drive systems, especially in applications that require high voltage and medium current. Its high current handling capability and stable switching performance make it suitable for power tools, motor controllers, and other motor drive applications.

3. **Inverters**: In inverter applications, such as solar inverters and uninterruptible power supplies (UPS), the FQP20N60C-VB can be used as the main switching element, providing high voltage tolerance and efficient switching performance, helping to improve the overall efficiency and reliability of the inverter.

4. **Power Conversion Modules**: In power conversion modules, this MOSFET can effectively handle high voltage and high power requirements and is widely used in AC-DC or DC-DC converters to ensure stable power output and system performance.

5. **Lighting Systems**: The FQP20N60C-VB is also suitable for high-voltage lighting systems, such as HID lamps and LED drivers, providing reliable switching functions and efficient current control to optimize the performance and life of lighting systems.

These application examples show the wide applicability of the FQP20N60C-VB MOSFET in handling high voltage and high power applications, ensuring high efficiency and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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