Product introduction：
Product Introduction
The FMP06N80E-VB is a high voltage, high current single N-channel MOSFET in a TO220 package. Designed for high voltage applications, this MOSFET has a drain-source voltage (VDS) of 700V, making it suitable for high voltage switching and power control systems. Its gate-source voltage (VGS) range is ±30V and its gate threshold voltage (Vth) is 3.5V, ensuring the stable switching characteristics of the MOSFET. The FMP06N80E-VB uses SJ_Multi-EPI technology, has an on-resistance (RDS(ON)) of 1100mΩ @VGS=10V, and can handle a maximum drain current (ID) of 5A. These features make the FMP06N80E-VB excellent in high voltage and high current applications, and is suitable for a variety of power supply and switching applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
700V |
|
3.5V |
5A |
|
|
1100mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
700V |
|
3.5V |
5A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
700V |
|
3.5V |
5A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Parameter Description
1. **Package Type**: TO220
The TO220 package provides a large contact area and excellent heat dissipation performance, suitable for applications that need to handle high power and high current.
2. **Configuration**: Single-N-Channel
The single-N-Channel MOSFET configuration provides efficient current control capability and is suitable for high voltage and high current switching applications.
3. **Drain-Source Voltage (VDS)**: 700V
The 700V drain-source voltage enables the MOSFET to handle high voltage loads and is suitable for high voltage switching and power conversion applications.
4. **Gate-Source Voltage (VGS)**: ±30V
The ±30V gate-source voltage range provides a large control voltage range, ensuring that the MOSFET can operate stably under various control conditions.
5. **Gate Threshold Voltage (Vth)**: 3.5V
The 3.5V gate threshold voltage ensures that the MOSFET can be turned on at a lower gate voltage, improving the switching efficiency.
6. **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
At a gate voltage of 10V, the 1100mΩ on-resistance provides lower conduction losses, which helps improve the energy efficiency and power transmission efficiency of the system.
7. **Maximum Drain Current (ID)**: 5A
The maximum drain current is 5A, which is suitable for handling medium and high current loads and is suitable for various switching and control applications.
8. **Technology Type**: SJ_Multi-EPI
SJ_Multi-EPI technology provides excellent conductive performance and low on-resistance, suitable for high voltage and high current switching applications.
Domain and module applications：
Applicable fields and modules
The FMP06N80E-VB MOSFET is suitable for the following fields and modules:
1. **High voltage power management**
In high voltage power management systems, the FMP06N80E-VB can efficiently handle high voltage loads and is suitable for high voltage DC-DC converters and power regulation modules. Its 700V voltage rating and 5A current handling capability ensure the stability and efficiency of the system.
2. **Switch Mode Power Supply (SMPS)**
The FMP06N80E-VB performs well in switch mode power supply applications, especially for power regulation and conversion tasks that require high voltage and high current. Its high voltage withstand capability and low on-resistance make it an ideal choice for high power power modules.
3. **High voltage switching circuits**
This MOSFET is suitable for high voltage switching circuits, such as high voltage load switches and power protection switches. Its 700V drain-source voltage and wide gate-source voltage range can meet the needs of high voltage applications.
4. **Power amplifier**
In power amplifiers, the FMP06N80E-VB can handle high voltages and high currents as a switching element, suitable for high power applications such as broadcast transmitters and audio power amplifiers.
5. **Industrial motor drive**
In industrial motor drive systems, this MOSFET can handle high voltage motor loads, suitable for power tools, electric vehicle drive systems and high power motor drive modules.
6. **Automotive electronics**
The FMP06N80E-VB is suitable for high voltage switching applications in automotive electronic systems, such as power management, electric vehicle drive systems and automotive power switch modules. Its high voltage tolerance and high current handling capabilities can meet the needs of automotive electronic systems.
With its high voltage handling capability, low on-resistance and excellent current handling capability, the FMP06N80E-VB is suitable for applications such as high voltage power management, switch mode power supplies, high voltage switching circuits, power amplifiers, industrial motor drives and automotive electronics, providing efficient and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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