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FIR75N06G-VB Product details

Product introduction:

1. Product Introduction

FIR75N06G-VB is a high-performance single N-channel MOSFET in TO220 package, designed for high current and high efficiency switching applications. Its maximum drain-source voltage (VDS) is 60V, and it has low on-resistance (RDS(ON) is 11mΩ @ VGS=10V and 13mΩ @ VGS=4.5V), which makes it perform well under high current conditions. The MOSFET adopts Trench technology, which provides excellent switching performance and low conduction loss, and is very suitable for high efficiency power conversion and power switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 60V 1.7V 60A 11mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 60V 1.7V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 60V 1.7V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
II. Detailed parameter description

- **Model**: FIR75N06G-VB
- **Package type**: TO220
- **Polarity**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Maximum drain current (ID)**: 60A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation**: 75W

Domain and module applications:

3. Application fields and module examples

1. **Switching Power Supply (SMPS)**: FIR75N06G-VB performs well in switching power supplies. As the main switching element, its low on-resistance and high current handling capability improve the efficiency of power conversion. Its low power consumption characteristics and high current carrying capacity make it particularly suitable for high-frequency switching operations.

2. **Motor Drive**: In motor drive applications, this MOSFET can be used to control high-current motors. Its low on-resistance ensures minimum energy loss in motor operation while providing stable current control, suitable for DC motor and brushless motor drive applications.

3. **LED Driver**: FIR75N06G-VB is also suitable for LED driver modules. Its low on-resistance and high current handling capability help improve the efficiency and stability of LED drivers. This MOSFET can effectively control high-power LEDs and reduce power losses.

4. **Battery Management System (BMS)**: In the battery management system, FIR75N06G-VB can be used as a battery protection and switch control device. Its high current carrying capacity and low on-resistance provide effective battery protection, ensuring stability and safety during charging and discharging.

In general, the high current handling capability and low on-resistance of the FIR75N06G-VB MOSFET make it excellent in high-power applications such as switching power supplies, motor drives, LED drivers, and battery management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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