Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
800V |
|
3.5V |
7A |
|
|
850mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
800V |
|
3.5V |
7A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
800V |
|
3.5V |
7A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Parameter Description
1. **Package Type**: TO220
The TO220 package provides good heat dissipation and mechanical strength, suitable for use in applications requiring high current capability and high power handling.
2. **Configuration**: Single-N-Channel
The single-N-Channel configuration allows the MOSFET to be used as a switching element in the circuit, suitable for controlling inductive or capacitive loads.
3. **Drain-Source Voltage (VDS)**: 500V
The 500V drain-source voltage enables this MOSFET to handle medium and high voltage power applications, suitable for use in high voltage power conversion and motor drives.
4. **Gate-Source Voltage (VGS)**: ±30V
The ±30V gate-source voltage improves the voltage withstand capability of the MOSFET, allowing it to operate safely in high voltage environments.
5. **Gate Threshold Voltage (Vth)**: 3.1V
The 3.1V gate threshold voltage ensures that the MOSFET can be effectively turned on at a lower gate voltage, which improves the flexibility of circuit design.
6. **On-resistance (RDS(ON))**: 660mΩ @ VGS=10V
The 660mΩ on-resistance can effectively reduce conduction losses and improve switching efficiency at a gate voltage of 10V.
7. **Maximum Drain Current (ID)**: 13A
The maximum drain current is 13A, making this MOSFET suitable for medium current applications and capable of handling larger current loads.
8. **Technology Type**: Plannar
Planar process technology provides good manufacturing consistency and reliability, and is suitable for use in a variety of power and switching applications.
Domain and module applications：
Applicable fields and modules
FIR18N50PG-VB MOSFET is suitable for the following fields and modules:
1. **Power converter**
In AC-DC and DC-DC power converters, this MOSFET can be used as a switching element to provide efficient voltage conversion and power management. Its high voltage and low on-resistance characteristics make it excellent in high-voltage power conversion and can significantly improve conversion efficiency.
2. **Motor drive**
In industrial motor drive systems, FIR18N50PG-VB can handle medium currents and provide reliable switching control, suitable for various motor control applications such as inverters and power tools.
3. **High-voltage lighting control**
This MOSFET is also suitable for high-voltage LED lighting and other high-voltage lighting systems. Its high drain-source voltage and low on-resistance characteristics can ensure the stability and energy efficiency of lamps.
4. **Battery Management System**
In the battery management system, FIR18N50PG-VB can be used in switching and protection circuits to handle the charge and discharge management of high-voltage battery packs, ensuring the reliability and safety of the system.
5. **High-voltage Switching Circuit**
Due to its high voltage and high current handling capabilities, this MOSFET is suitable for use in a variety of high-voltage switching circuits, including power electronics and power protection systems, providing efficient switching control and protection functions.
Through its high voltage capability, low on-resistance and good thermal stability, the FIR18N50PG-VB MOSFET provides reliable performance in a variety of applications such as power conversion, motor drive, lighting control and battery management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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