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FH8337-VB Product details

Product introduction:

1. FH8337-VB Product Introduction

FH8337-VB is a high-efficiency N-channel MOSFET designed in a compact DFN8 (5x6) package, optimized for high current handling and low power consumption applications. The device supports a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. Based on Trench technology, the on-resistance (RDS(ON)) of FH8337-VB is 9mΩ at a VGS of 4.5V, which is further reduced to 7mΩ at a VGS of 10V. With a maximum drain current (ID) of 80A, this MOSFET is suitable for electronic applications with efficient power management and high power density, ensuring stable operation under high current loads.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 80A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
2. FH8337-VB Detailed parameter description

- **Package type**: DFN8(5x6)
- **Channel configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Drain current (ID)**: 80A
- **Technology**: Trench

Domain and module applications:

III. Application Fields and Module Examples

1. **DC-DC Converter**: FH8337-VB is very suitable for high-efficiency DC-DC converters. Its low on-resistance reduces losses and improves conversion efficiency during power conversion, especially in portable devices and battery-powered devices.

2. **Power Tools**: In power tools that require high current, such as electric drills and lithium battery-driven tools, FH8337-VB can be used as the main power switch to ensure reliable power transmission and control under high load conditions.

3. **Battery Management System (BMS)**: This MOSFET can be used in battery management systems to provide an efficient current path for battery charging and discharging management, effectively extending the battery life and improving the reliability of the overall system.

4. **Server and Data Center Power Management**: In server and data center power management, FH8337-VB, as part of the power controller, can maintain high efficiency under high current and low voltage conditions to ensure stable operation of data center equipment.

5. **Automotive Electronics**: In automotive electronic systems, FH8337-VB can be used in power distribution units and load switches to provide high efficiency and reliability, especially for the power systems of electric vehicles and hybrid vehicles.

FH8337-VB is an ideal choice for a wide range of power management and high current electronic devices through its excellent electrical performance and efficient power handling capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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