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FH5025-VB Product details

Product introduction:

FH5025-VB MOSFET Product Introduction

The FH5025-VB is a single N-channel MOSFET in a DFN8(5x6) package designed for high voltage applications. It has a drain-source voltage (VDS) tolerance of 250V, suitable for circuits that require high voltage control. The gate-source voltage (VGS) range of this MOSFET is ±20V, ensuring stable operation over a wide gate voltage range. Its gate threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 42mΩ at a gate voltage of 10V. The FH5025-VB is capable of handling drain currents (ID) of up to 35A, providing strong switching capabilities. Using Trench technology, this MOSFET combines high voltage tolerance with high current handling capabilities, suitable for power management and switching applications that require high performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 250V 3.5V 35A 42mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 250V 3.5V 35A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 250V 3.5V 35A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
Detailed parameter description

- **Package**: DFN8(5x6), compact surface mount package, suitable for high-density circuit board design.
- **Configuration**: Single N-channel MOSFET, suitable for separate switch control and power management.
- **VDS (drain-source voltage)**: 250V, the maximum drain-source voltage that can be tolerated.
- **VGS (gate-source voltage)**: ±20V, the maximum voltage range between the gate and the source.
- **Vth (gate threshold voltage)**: 3.5V, the minimum gate voltage required for the MOSFET to start conducting.
- **RDS(ON) (on-resistance)**:
- 42mΩ @ VGS = 10V, ensuring low conduction loss and high efficiency.
- **ID (drain current)**: 35A, maximum continuous drain current capability.
- **Technology**: Trench technology, providing excellent switching characteristics and low on-resistance.

Domain and module applications:

Application examples

The high voltage tolerance and high current handling capability of FH5025-VB make it suitable for multiple fields and modules:

1. **High voltage power management**: In high voltage power systems, such as power converters and high voltage switching circuits, FH5025-VB can provide reliable switching control to ensure power stability and safety. Its 250V drain-source voltage tolerance makes it very suitable for high voltage applications.

2. **Power switch**: Suitable for applications that require high current and high voltage switching, such as DC-DC converters, power amplifiers, and motor drive circuits. Its drain current handling capability of up to 35A can meet the needs of high power loads.

3. **Inverter and converter**: In inverter and converter circuits, FH5025-VB can be used for high voltage switching and power protection. Its low on-resistance helps reduce energy loss and improve system efficiency.

4. **Power supply system**: In power supply systems, such as battery management systems and power distribution modules, the high voltage and high current characteristics of FH5025-VB can support the stable operation and load management of the system.

5. **Industrial equipment**: In industrial equipment and automation systems, FH5025-VB can be used for high voltage control and protection circuits to enhance the reliability and durability of equipment. Its rugged design is suitable for working in harsh industrial environments.

In summary, FH5025-VB is a high voltage, high current and low on-resistance MOSFET, which is very suitable for high voltage power management and switching applications, and can effectively improve the overall performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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