Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
20V |
12（±V） |
0.5~1.5V |
6A |
42mΩ |
|
|
|
Detailed parameter description
1. **Package**: SOT23-3
- SOT23-3 is a small surface mount package suitable for space-constrained circuit board design, providing high packaging density and circuit board utilization.
2. **Configuration**: Single-channel N-channel
- Single-channel N-channel MOSFET is commonly used in low-side switching and load driving applications, with high switching speed and low on-resistance.
3. **Drain-source voltage (VDS)**: 20V
- The maximum drain-source voltage is 20V, suitable for low-voltage applications such as battery-powered devices and portable electronics.
4. **Gate-source voltage (VGS)**: ±12V
- The maximum gate-source voltage is ±12V, providing good gate control capability to ensure stable operation of the MOSFET under various operating conditions.
5. **Threshold Voltage (Vth)**: 0.5V to 1.5V
- The threshold voltage range of 0.5V to 1.5V ensures that the MOSFET can be effectively turned on at low voltages.
6. **On-resistance (RDS(ON))**:
- 42mΩ at VGS = 2.5V
- 28mΩ at VGS = 4.5V
- The low on-resistance reduces power dissipation, making it an excellent performer in low voltage applications.
7. **Continuous Drain Current (ID)**: 6A
- The maximum continuous drain current is 6A, suitable for low to medium current load switching and driving applications.
8. **Technology**: Trench
- Trench technology improves switching speed and reduces on-resistance, providing excellent performance in a small package.
Domain and module applications：
Application Examples
1. **Portable Electronic Devices**
- The FDV303N-VB is ideal for portable electronic devices such as smartphones, tablets, and portable music players. Its small package and low on-resistance enable it to efficiently control current in low-voltage circuits, extending battery life and reducing device heating.
2. **Battery Management System**
- In a battery management system, the FDV303N-VB can be used for battery switching and current control. Its low on-resistance and high current handling capability enable it to effectively manage the battery charge and discharge process, providing reliable protection and high efficiency.
3. **Load Switch**
- Due to its low on-resistance and fast switching speed, the FDV303N-VB is suitable for low-voltage load switch applications. It can be used as an efficient switch in power management circuits, reducing power consumption and improving circuit efficiency.
4. **DC-DC Converters**
- In low-power DC-DC converters, the FDV303N-VB can be used as a switching element to provide efficient power conversion, supporting miniaturization and high-efficiency circuit design.
5. **Sensor Interface Circuits**
- This MOSFET is also suitable for various sensor interface circuits, which can efficiently control the power switch of the sensor and ensure efficient sensor operation in a small package.
The compact package, low on-resistance and good switching performance of the FDV303N-VB make it an excellent application value in portable electronic devices, battery management systems, load switches, DC-DC converters and sensor interface circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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