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FDS9400A-VB Product details

Product introduction:

FDS9400A-VB MOSFET Product Introduction

The FDS9400A-VB is a single P-channel MOSFET in a SOP8 package suitable for operation at a drain-source voltage (VDS) of -30V and a gate voltage (VGS) of ±20V. Designed for low-voltage switching applications, the device features a low on-resistance (RDS(ON)) of 56mΩ at VGS=4.5V and 33mΩ at VGS=10V, thereby reducing power loss and improving system efficiency. Its maximum drain current (ID) is -5.8A, sufficient to support low- to medium-power applications. Using trench technology, the FDS9400A-VB provides high-efficiency current handling capabilities, suitable for a variety of electronic devices requiring low-voltage control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-P -30V -1.7V -5.8A 33mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-P -30V -1.7V -5.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-P -30V -1.7V -5.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-P
FDS9400A-VB Detailed parameter description

- **Package type**: SOP8
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -30V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 56mΩ @ VGS = 4.5V
- 33mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -5.8A
- **Technology type**: Trench

Domain and module applications:

Application fields and module examples

As a single P-channel MOSFET, FDS9400A-VB has good low-voltage switching characteristics and is widely used in various electronic devices that require efficient and low-power switching. Here are some applicable fields and modules:

1. **Power management module**: FDS9400A-VB is very suitable for use in power management circuits, especially in battery-powered devices such as smartphones, laptops and tablets. The device can effectively control the switching of power to ensure that the device operates in low-power mode and prolong battery life.

2. **Load switch**: Due to its low on-resistance and moderate current handling capability, FDS9400A-VB can be used to control various medium and low power loads, such as lighting systems, power switches of portable electronic devices, etc. It can provide stable and reliable switching control to ensure the normal operation of the device.

3. **Charging circuit**: FDS9400A-VB can be used in various charger circuits, especially as a switch in battery charging management. Its high-efficiency switching capability ensures energy conversion efficiency during battery charging and reduces unnecessary energy loss.

4. **DC-DC Converter**: This MOSFET is also suitable for low-power DC-DC converters, providing efficient voltage conversion and regulation, especially in applications requiring low input voltage, such as wearable devices, embedded systems, etc. The P-channel configuration of FDS9400A-VB helps to achieve simple control logic and higher conversion efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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