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FDS8960C-VB Product details

Product introduction:

1. FDS8960C-VB Product Introduction

FDS8960C-VB is a bipolar (Dual N+P-Channel) MOSFET packaged in SOP8. Designed for a variety of power management and switching applications, the device features a drain-source voltage (VDS) of ±30V and a maximum drain current (ID) of ±8A, and uses advanced Trench technology to ensure low on-resistance and high efficiency. The combination of N-channel and P-channel MOSFETs in the FDS8960C-VB provides flexible circuit design options, making it particularly suitable for applications that require bipolar switching or complex power management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
2. FDS8960C-VB Detailed parameter description

- **Package type**: SOP8
- **Configuration**: Dual channel (N+P-channel)
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N-channel: 1.6V
- P-channel: -1.7V
- **On-resistance (RDS(ON))**:
- N-channel: 24mΩ @ VGS=4.5V; 18mΩ @ VGS=10V
- P-channel: 50mΩ @ VGS=4.5V; 40mΩ @ VGS=10V
- **Maximum drain current (ID)**: ±8A
- **Technology**: Trench technology
- **Maximum power consumption**: Depends on specific application and thermal design.

Domain and module applications:

III. Application fields and module examples

1. **Power management system**: FDS8960C-VB is an ideal choice in power management systems, especially for circuits that require bipolar control. Its N+P dual-channel configuration allows for switching control of positive and negative voltages in the same package, providing flexible power distribution and management capabilities.

2. **Battery protection circuit**: This MOSFET has significant advantages in battery protection circuits. P-channel MOSFETs can be used for battery charge and discharge control, while N-channel MOSFETs can be used for overcurrent protection. Its low on-resistance and high current handling capabilities ensure the efficiency and safety of battery management systems.

3. **Load switch**: FDS8960C-VB performs well in load switch applications and can efficiently control various types of loads. Its bipolar design enables it to handle loads of different voltage polarities, suitable for a variety of complex load switching scenarios, such as applications in mobile devices and portable electronic devices.

4. **DC-DC Converter**: The dual-channel configuration of this device provides flexible design options in DC-DC converters, which can effectively manage the conversion of input and output voltages and improve the efficiency and stability of the converter.

In summary, the FDS8960C-VB is a high-performance bipolar MOSFET that is widely used in power management, battery protection, load switching, and DC-DC converters. It provides flexibility and efficient switch control capabilities for circuit design and is an important device in complex power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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