Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-P+P |
-100V |
|
-2V |
-4.5A |
|
|
110mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-P+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-P+P |
-100V |
|
-2V |
-4.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-P+P |
-100V |
|
-2V |
-4.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-P+P |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: SOP8
- The SOP8 package is suitable for surface mount technology, suitable for high-density circuit board design, easy to install and heat dissipate.
2. **Configuration**: Dual-channel P-channel
- The dual-channel P-channel configuration includes two P-channel MOSFETs, suitable for symmetrical power supply and bridge circuit applications, and can provide bidirectional switching control.
3. **Drain-source voltage (VDS)**: -100V
- The maximum drain-source voltage is -100V, which is suitable for stable switching operation in high-voltage applications.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum allowed gate-source voltage is ±20V, providing a large gate drive voltage range to ensure that the MOSFET works stably under various conditions.
5. **Threshold Voltage (Vth)**: -2V
- The threshold voltage is -2V, indicating that the MOSFET starts to conduct when the gate-source voltage is -2V, which is suitable for low gate drive voltage applications.
6. **On-resistance (RDS(ON))**:
- 155mΩ at VGS = 4.5V
- 110mΩ at VGS = 10V
- Lower on-resistance helps reduce power consumption and improve circuit efficiency.
7. **Continuous Drain Current (ID)**: -4.5A
- The maximum continuous drain current is -4.5A, which is suitable for handling medium current loads.
8. **Technology**: Trench
- Trench technology provides lower on-resistance and higher switching speed, improving the overall efficiency and performance of the circuit.
Domain and module applications:
Application Examples
1. **Power Switch**
- FDS8935-VB performs well in power switch applications. Its high withstand voltage and low on-resistance enable it to efficiently control power switches and is widely used in power adapters, chargers, and power modules.
2. **Bridge Circuit**
- In the bridge circuit, the dual-channel P-channel configuration of FDS8935-VB enables it to effectively control the flow and direction of current, which is suitable for motor drive, battery management system, and H-bridge drive circuit.
3. **High-voltage Load Switch**
- Due to its high withstand voltage capability, FDS8935-VB is suitable for high-voltage load switch applications such as high-voltage power management and power system protection, and can effectively handle high-voltage loads.
4. **Motor Drive**
- In motor drive applications, the FDS8935-VB provides reliable switching control and current handling capabilities for brushless motors, stepper motor drive circuits, and various power tools and robotic systems.
5. **Inverters and Converters**
- The high voltage handling capability and low on-resistance of the FDS8935-VB make it suitable for inverter and converter applications, which can effectively convert and control high voltage power supplies for solar inverters, UPS systems, and electric vehicle chargers.
With its excellent switching performance and high voltage handling capabilities, the FDS8935-VB is suitable for a variety of high voltage, high efficiency energy conversion applications, making it an ideal choice in modern electronic circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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