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FDS6986A-NL-VB Product details

Product introduction:

FDS6986A-NL-VB MOSFET Product Introduction

The FDS6986A-NL-VB is a half-bridge N-channel MOSFET in a SOP8 package, designed for high-efficiency power and switching applications. The device has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 1.7V. Its on-resistance (RDS(ON)) is 21.6mΩ at a VGS of 4.5V, which drops to 18mΩ at a VGS of 10V. The FDS6986A-NL-VB supports drain currents (ID) of up to 6.8A and 10A, and through its Trench technology, it is able to provide low-power and high-efficiency solutions in various switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Half-Bridge-N+N 30V 1.7V 6.8/10A 18mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Half-Bridge-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Half-Bridge-N+N 30V 1.7V 6.8/10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Half-Bridge-N+N 30V 1.7V 6.8/10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Half-Bridge-N+N
Detailed parameter description

- **Package type**: SOP8
- **Polarity configuration**: Half-bridge N+N channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 21.6mΩ @ VGS=4.5V
- 18mΩ @ VGS=10V
- **Drain current (ID)**:
- Channel 1: 6.8A
- Channel 2: 10A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power consumption (PD)**: 2.5W

Domain and module applications:

Application Examples of Applicable Fields and Modules

The FDS6986A-NL-VB MOSFET is suitable for the following fields and modules due to its half-bridge configuration, low on-resistance and high current handling capability:

1. **Power Conversion**: The half-bridge N+N channel configuration of the FDS6986A-NL-VB enables it to have excellent switching efficiency in power modules such as synchronous rectification DC-DC converters, boost converters and buck converters. Its low RDS(ON) characteristics reduce conduction losses and are suitable for high-efficiency power supply designs.

2. **Motor Drive**: In motor control and drive circuits, the FDS6986A-NL-VB can be used as a high-side or low-side switch in a half-bridge configuration to control the direction and speed of the motor. Its high efficiency makes it widely used in low-voltage motor drive applications such as power tools, fans and small appliances.

3. **Consumer electronics**: In smartphones, tablets, and other portable devices, the FDS6986A-NL-VB can be used for power management and charging circuits. Its half-bridge configuration provides flexible switching control, which can improve the power efficiency of the device and extend battery life.

4. **Automotive electronics**: The FDS6986A-NL-VB performs well in automotive electronics applications, such as power management modules and switching control of electric systems. Its high reliability and low loss characteristics can meet the stringent requirements of automotive applications and ensure stable operation in high temperature environments.

The FDS6986A-NL-VB MOSFET offers a wide range of application options with its half-bridge configuration and excellent electrical performance, especially in important applications that require high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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