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FDS6675B-VB Product details

Product introduction:

1. FDS6675B-VB Product Introduction

FDS6675B-VB is a P-channel MOSFET with a single P-channel configuration in a SOP8 package. The device is designed to provide efficient current control in low-voltage power management and switching applications. Its main features include a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of 20V, and extremely low on-resistance (RDS(ON)), which enables it to have good application performance in load switches, DC-DC converters, and power management circuits. The application of Trench technology ensures the device's low on-resistance and fast switching characteristics at high currents.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-P -30V -2.5V -11.6A 11mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-P -30V -2.5V -11.6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-P -30V -2.5V -11.6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-P
2. Detailed parameter description of FDS6675B-VB

- **Package type**: SOP8
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Maximum drain current (ID)**: -11.6A
- **Technology**: Trench technology
- **Maximum power consumption**: Based on the design and heat dissipation conditions, the device has a high power handling capability to ensure reliable operation under high load conditions.

Domain and module applications:

III. Application Fields and Module Examples

1. **Power Management Circuit**: FDS6675B-VB is suitable for power management modules, especially circuits that require efficient low-voltage control. Due to its low on-resistance, it can effectively reduce power loss and improve the overall efficiency of the circuit.

2. **Load Switch**: In switching power supplies and load switches, FDS6675B-VB enables efficient power switching and control through its excellent on-characteristics and fast switching speed. It is especially suitable for circuits that require frequent switching.

3. **DC-DC Converter**: In a DC-DC converter, this MOSFET can be used in the synchronous rectifier part to reduce the converter's losses and improve energy efficiency.

4. **Battery Management System**: Due to its low voltage operation capability and efficient current control, FDS6675B-VB can be used in lithium-ion battery protection and management systems to effectively protect the battery from overvoltage and overcurrent.

These applications demonstrate the wide applicability of FDS6675B-VB in low-voltage and high-efficiency control scenarios, and are suitable for use in a variety of electronic devices requiring high-performance switches.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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