Product introduction：
Product Introduction
The FDS6630A-VB is a high-performance N-type MOSFET in a SOP8 package, designed for power management and switching applications that require high efficiency and low power loss. This MOSFET uses Trench technology, providing excellent switching characteristics and low on-resistance. Its maximum drain-source voltage (VDS) is 30V, which is suitable for low-voltage environments. The gate threshold voltage (Vth) of the FDS6630A-VB is 1.7V, allowing it to start at a relatively low gate voltage. Its on-resistance (RDS(ON)) is 29mΩ at VGS=4.5V and drops to 16mΩ at VGS=10V, providing excellent conductivity performance at higher currents. This MOSFET supports a maximum drain current (ID) of 6.8A, allowing it to perform well in high-current applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
6.8A |
|
|
16mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
6.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
6.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: SOP8
- **Configuration**: Single N-type channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 29mΩ @ VGS=4.5V
- 16mΩ @ VGS=10V
- **Maximum drain current (ID)**: 6.8A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management**:
- **DC-DC converter**: In DC-DC converters, FDS6630A-VB can be used as a switching element to optimize power conversion efficiency and reduce energy loss.
2. **Power switch**:
- **Switching power module**: FDS6630A-VB can be used as a low-side switch in a switching power module to provide efficient current management and ensure the stability of the power system.
3. **Consumer electronics**:
- **Smartphones and portable devices**: In consumer electronics such as smartphones and tablets, FDS6630A-VB can be used as a power switch to improve the energy efficiency of the device and extend battery life.
4. **Motor control**:
- **Small motor drive**: FDS6630A-VB can be used in small motor drive circuits to provide efficient switching control and enhance motor performance and response speed.
5. **Automotive electronics**:
- **Automotive power management system**: In automotive power management systems, this MOSFET can be used as a power switch to optimize power distribution and protection circuits, and improve the reliability of automotive electronic systems.
6. **LED drive**:
- **LED lighting control**: In LED drive circuits, FDS6630A-VB can be used as a switching element to control the switching state of LEDs to ensure stable lighting effects.
The low on-resistance, high drain current capability, and excellent switching performance of FDS6630A-VB make it an excellent choice for power management, switch control, and various high-efficiency circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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