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FDMS4435BZ-VB Product details

Product introduction:

1. FDMC4435BZ-VB Product Introduction

FDMC4435BZ-VB is a high-performance P-channel MOSFET in DFN8 (5x6) package. It has extremely low on-resistance and high current carrying capacity, and is particularly suitable for applications that require high power handling and low power consumption. With a maximum drain-source voltage of -30V and a maximum drain current of -60A, this MOSFET can operate stably in high current and high voltage environments. Using Trench technology, this MOSFET provides a low on-resistance of 7.8mΩ at a VGS of 10V, ensuring excellent power conversion efficiency and thermal management performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-P -30V -2.5V -60A 7.8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-P -30V -2.5V -60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-P -30V -2.5V -60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-P
2. FDMC4435BZ-VB Detailed parameter description

- **Package type**: DFN8(5x6)
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 7.8mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -60A
- **Technology**: Trench

Domain and module applications:

III. FDMC4435BZ-VB Application Fields and Modules

The high current handling capability and low on-resistance of FDMC4435BZ-VB make it very useful in a variety of fields and modules:

1. **Power Management System**: In power management applications, FDMC4435BZ-VB can be used as an efficient switching element to optimize the current path and reduce power loss. Its low on-resistance helps improve the energy efficiency of the system, especially suitable for high-power switching power supplies and regulators.

2. **DC-DC Converter**: In DC-DC converter design, this MOSFET can provide excellent switching performance and enhance conversion efficiency. Its low on-resistance and high current capability make it suitable for applications requiring high load current, improving the power density and performance of the overall system.

3. **Electric Vehicles and Charging Systems**: In the battery management and charging system of electric vehicles, the high current carrying capability and low on-resistance of FDMC4435BZ-VB help improve charging efficiency and system stability. It can effectively handle high current loads during battery charging and discharging, ensuring safe and reliable operation.

4. **Industrial Power**: In industrial applications, the FDMC4435BZ-VB can be used as a key component in power switches and power control modules. Its high current handling capability and low power consumption make it suitable for a variety of high-power industrial power supplies and drive systems.

5. **Load Switch**: In load switch applications, the low on-resistance and high current capability of this MOSFET make it an ideal choice. It can effectively control high current loads, provide stable switching performance and reduce power losses in the system.

These features of the FDMC4435BZ-VB ensure its excellent performance in a variety of high-power, high-current applications, providing a reliable power management solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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