Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
2.6A |
110mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-6 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
2.6A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-6 |
Dual-N+N |
20V |
|
0.5~1.5V |
2.6A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-6 |
Dual-N+N |
|
|
|
|
|
|
|
FDG6301N_F085-VB MOSFET Detailed parameter description
- **Package type**: SC70-6
- **Polarity**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 110mΩ @ VGS = 2.5V
- 86mΩ @ VGS = 4.5V
- **Maximum continuous drain current (ID)**: 2.6A
- **Technology**: Trench
- **Input capacitance (Ciss)**: Low
- **Output capacitance (Coss)**: Low
- **Reverse recovery time (trr)**: short
- **Power dissipation**: low conduction loss and high switching efficiency
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Application fields and module examples of FDG6301N_F085-VB
The small package size and good electrical characteristics of FDG6301N_F085-VB MOSFET make it suitable for a variety of low-voltage, high-efficiency electronic applications. Here are some typical application areas:
1. **Portable electronic devices**: Due to its compact SC70-6 package, FDG6301N_F085-VB is suitable for portable electronic devices such as smartphones, tablets and mobile power supplies. In these applications, MOSFET can be used for power management, battery switching and protection circuits to save space and improve system efficiency.
2. **Low-power switching power supply**: In low-power switching power supply design, FDG6301N_F085-VB can be used as a switching element, especially in applications below 20V. Its low on-resistance and high switching efficiency help improve the overall performance of the power supply, and is suitable for LED drivers, chargers and small power adapters.
3. **Battery Management System (BMS)**: In battery management systems, FDG6301N_F085-VB can be used for battery switches and protection circuits. Its small size and excellent electrical performance are suitable for lithium-ion battery management and other battery pack charge and discharge control, improving system reliability and safety.
4. **Consumer Electronics**: In various consumer electronics products, such as home appliances and small power tools, FDG6301N_F085-VB can be used as a switch control and load driver. Its low RDS(ON) and high current capability can effectively drive loads and optimize power consumption.
5. **Automotive Electronics**: In automotive electronics applications, FDG6301N_F085-VB is suitable for low-voltage automotive control systems such as LED lighting, instrument panel displays, and on-board chargers. Its high switching efficiency and small size enable it to meet the stringent space and performance requirements of automotive electronic systems.
In summary, the FDG6301N_F085-VB MOSFET provides efficient switching performance and compact packaging, suitable for a variety of low-voltage, high-efficiency power electronics applications, and can effectively improve the performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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