Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
900V |
|
3.5V |
5A |
|
|
1500mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
900V |
|
3.5V |
5A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
900V |
|
3.5V |
5A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: TO220
- **Package type**: TO220, this package is suitable for medium and high power applications and provides good heat dissipation capabilities.
2. **Configuration**: Single N-channel
- **Type**: N-channel MOSFET, suitable for positive voltage switching and current control applications, providing excellent switching performance and current carrying capacity.
3. **Drain-source voltage (VDS)**: 900V
- **Maximum drain-source voltage**: Supports drain-source voltage up to 900V, suitable for high voltage circuit applications.
4. **Gate-source voltage (VGS)**: ±30V
- **Maximum gate-source voltage**: Able to withstand gate voltages of ±30V, providing flexible gate drive options.
5. **Threshold voltage (Vth)**: 3.5V
- **Enable threshold voltage**: The threshold voltage is 3.5V, ensuring effective conduction at relatively low gate voltage.
6. **On-resistance (RDS(ON))**: 1500mΩ @ VGS=10V
- **On-resistance**: When the gate voltage is 10V, the on-resistance is 1500mΩ, suitable for applications requiring high voltage withstand capability.
7. **Maximum drain current (ID)**: 5A
- **Maximum continuous current**: Able to withstand a maximum drain current of 5A, suitable for medium power load applications.
8. **Technology**: SJ_Multi-EPI
- **Technology type**: Adopts SJ_Multi-EPI technology, optimizes voltage tolerance and on-resistance, and provides high performance and stability.
Domain and module applications：
Application fields and module examples
The high voltage handling capability and moderate on-resistance of FBF30-VB make it suitable for multiple fields and modules:
1. **High voltage power switch**
In high voltage power switch system, FBF30-VB can be used for high voltage DC-DC converter and power switch. Its high voltage handling capability and relatively low on-resistance enable it to work stably in high voltage environment, improving the reliability and efficiency of the system.
2. **Power inverter**
In power inverter application, FBF30-VB can be used for switching and power regulation of high voltage inverter. Its high drain-source voltage and stable on-performance ensure the high efficiency and stability of the inverter, which is suitable for photovoltaic power generation system and other high power inverters.
3. **High voltage battery management system**
In high voltage battery management system, FBF30-VB can be used for battery switching control and power regulation. Its high voltage capability and moderate on-resistance enable it to provide reliable performance in high-voltage battery systems, suitable for electric vehicles, battery energy storage systems and other fields.
4. **Industrial Motor Control**
In industrial motor control systems, FBF30-VB can be used to drive and control high-voltage motors. Its high voltage tolerance and good switching performance ensure the stable operation of high-voltage motors, suitable for high-power motors and drive systems.
5. **Power Conversion and Lighting Applications**
In high-voltage power conversion and lighting applications, FBF30-VB can be used for lighting adjustment and power conversion. Its high voltage capability and stable switching characteristics improve the efficiency and performance of the system, suitable for high-voltage lighting systems and power conversion modules.
The high voltage tolerance and relatively low on-resistance of FBF30-VB MOSFET enable it to perform well in high-voltage and high-power applications, meeting the needs of various high-performance circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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