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FB4410Z-VB Product details

Product introduction:

FB4410Z-VB MOSFET Product Introduction

FB4410Z-VB is a high-performance N-channel MOSFET in TO220 package. Designed to withstand high voltage and high current applications, the device provides excellent switching performance and low on-resistance. Its drain-source voltage (VDS) can reach 100V, suitable for a variety of medium and high voltage power supply applications. The gate-source voltage (VGS) of FB4410Z-VB is ±20V, which ensures stable operation under a wide range of gate drive voltages. The gate threshold voltage (Vth) is 2.5V, which means that effective switching operation can be achieved at a lower gate voltage. At VGS=10V, its on-resistance (RDS(ON)) is as low as 9mΩ, ensuring low power consumption and efficient switching performance, capable of handling up to 100A of drain current (ID). Manufactured using Trench technology, FB4410Z-VB provides high efficiency while also having low switching losses.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 2.5V 100A 9mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 2.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 2.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
FB4410Z-VB MOSFET Detailed parameter description

- **Package type (Package): ** TO220
- **Configuration (Configuration): ** Single-N-Channel
- **Drain-source voltage (VDS): ** 100V
- **Gate-source voltage (VGS): ** ±20V
- **Gate threshold voltage (Vth): ** 2.5V
- **On-resistance (RDS(ON)): ** 20mΩ @ VGS=4.5V
- **On-resistance (RDS(ON)): ** 9mΩ @ VGS=10V
- **Drain current (ID): ** 100A
- **Technology type (Technology): ** Trench

Domain and module applications:

FB4410Z-VB MOSFET Applicable fields and application modules

FB4410Z-VB MOSFET is widely used in various power and energy management fields due to its high voltage and high current handling capabilities:

1. **Switching Power Supply (SMPS):** In switching power supply applications, FB4410Z-VB provides excellent switching efficiency and low on-resistance, making it excel in high voltage and high current power conversion. Its high current handling capability and low power consumption characteristics ensure high efficiency and reliability of power conversion.

2. **Motor Drive:** FB4410Z-VB is able to provide stable drive for high voltage motors and is suitable for industrial motor drive systems. Its high current handling capability enables it to cope with high load requirements during motor startup and operation, while low on-resistance reduces power consumption and heat.

3. **Uninterruptible Power Supply (UPS):** In UPS systems, FB4410Z-VB is used to manage the conversion of high voltage battery packs and loads. Its high current handling capability and low on-resistance help improve UPS efficiency, ensuring reliable backup power during power outages.

4. **Power Converters:** In various power converter applications, such as DC-DC converters, the FB4410Z-VB is able to effectively manage the conversion of high voltage inputs and outputs. Its excellent switching performance and low power consumption characteristics improve conversion efficiency and are suitable for use in high-power power modules.

5. **Power Protection Circuits:** In power protection circuits, the FB4410Z-VB is able to handle high voltages and high currents, providing effective switching and protection functions. Its low on-resistance ensures that power losses are minimized while improving system reliability and safety.

In general, the FB4410Z-VB MOSFET is widely used in various power systems that require efficient energy conversion and management due to its high voltage, high current capability and low on-resistance, providing designers with a reliable and efficient solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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