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FB4103-VB Product details

Product introduction:

FB4103-VB MOSFET Product Introduction

FB4103-VB is a high-voltage single N-channel MOSFET in TO220 package, designed for applications that need to handle high voltage and high current. Its drain-source voltage (VDS) is as high as 200V, suitable for switching and regulation in high voltage environments. MOSFET uses Trench technology to provide low on-resistance and high current handling capability. The maximum drain current (ID) of FB4103-VB is 30A, and it can operate stably under high load conditions. Its threshold voltage (Vth) is 3V, which allows reliable conduction at lower gate voltages, improving switching efficiency and system performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 200V 3V 30A 110mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 200V 3V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 200V 3V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

1. **Package**: TO220
- **Package type**: TO220, suitable for high power applications, with good heat dissipation performance.

2. **Configuration**: Single N-channel
- **Type**: N-channel MOSFET, suitable for positive voltage switching applications, providing efficient current control.

3. **Drain-source voltage (VDS)**: 200V
- **Maximum drain-source voltage**: Supports voltages up to 200V, suitable for high voltage circuits.

4. **Gate-source voltage (VGS)**: ±20V
- **Maximum gate-source voltage**: Able to withstand gate voltages of ±20V, suitable for a variety of gate drive circuits.

5. **Threshold voltage (Vth)**: 3V
- **Enable threshold voltage**: The threshold voltage is 3V, which ensures normal conduction when the gate voltage exceeds 3V.

6. **On-resistance (RDS(ON))**:
- **110mΩ @ VGS=10V**
- **Resistance in the on state**: Low on-resistance helps reduce power consumption and heat generation, and improve switching efficiency.

7. **Maximum drain current (ID)**: 30A
- **Maximum continuous current**: Able to withstand currents up to 30A, suitable for high current load applications.

8. **Technology**: Trench
- **Technology type**: Trench technology optimizes on-resistance, improves switching performance and power efficiency.

Domain and module applications:

Application fields and module examples

The high voltage and high current characteristics of FB4103-VB enable it to excel in multiple fields and modules:

1. **High power switching power supply**
In high power switching power supply, the high drain-source voltage and low on-resistance of FB4103-VB enable it to effectively handle high power power conversion. It can provide stable switching control under high load conditions, reducing energy loss and heat generation.

2. **Power management system**
Suitable for various power management systems such as battery management and power converters. Its high current handling capability and low on-resistance enable it to efficiently control current in power management and improve the overall efficiency of the system.

3. **Industrial motor drive**
In industrial motor drive systems, FB4103-VB can handle high current loads and provide stable motor control. Its high current capability and low on-resistance ensure efficient operation and stability of the motor.

4. **Electric Vehicles and Battery Management**
In the battery management system of electric vehicles, this MOSFET can be used for battery switching and power regulation. Its high current and high voltage handling capabilities make it excel in power regulation in electric vehicles, ensuring system reliability and efficiency.

5. **Switching Regulation and Protection Circuits**
FB4103-VB is also suitable for various switching regulation and protection circuits, especially in application scenarios that require high voltage and high current handling. Its high withstand voltage and high current capabilities ensure the safe and stable operation of the circuit.

The high voltage and high current handling capabilities of this MOSFET enable it to perform well in high power and high voltage applications, providing a reliable solution for a variety of complex circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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