Product introduction：
FB3207Z-VB MOSFET Product Introduction
FB3207Z-VB is a high-performance single N-channel MOSFET in TO220 package, designed for high current and low on-resistance applications. With a drain-source voltage (VDS) of 80V and a maximum gate-source voltage (VGS) of ±20V, this MOSFET is suitable for high-voltage switching and regulation applications. Its threshold voltage (Vth) is 3V, which enables stable operation even at low gate voltage. FB3207Z-VB uses Trench technology to provide extremely low on-resistance (RDS(ON)), which is 3mΩ at VGS=10V, suitable for high current and high efficiency circuits. Its maximum continuous drain current (ID) is up to 195A, making it an ideal choice for high power applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
195A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
195A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
195A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: TO220
- **Package type**: TO220, suitable for high power applications, provides good heat dissipation performance.
2. **Configuration**: Single N-channel
- **Type**: N-channel MOSFET, suitable for positive voltage switching and regulation applications.
3. **Drain-source voltage (VDS)**: 80V
- **Maximum drain-source voltage**: Able to withstand voltages up to 80V, suitable for medium and high voltage applications.
4. **Gate-source voltage (VGS)**: ±20V
- **Maximum gate-source voltage**: Supports gate voltage drive of ±20V, suitable for various gate control circuits.
5. **Threshold Voltage (Vth)**: 3V
- **Enable Threshold Voltage**: The threshold voltage is 3V to ensure normal operation when the gate voltage exceeds 3V.
6. **On-resistance (RDS(ON))**:
- **3.6mΩ @ VGS=4.5V**
- **3mΩ @ VGS=10V**
- **On-state resistance**: The extremely low on-resistance provides efficient switching performance and reduces power consumption.
7. **Continuous Drain Current (ID)**: 195A
- **Maximum Continuous Current**: The MOSFET can withstand currents up to 195A, suitable for extremely high current load applications.
8. **Technology**: Trench
- **Technology Type**: Trench technology optimizes on-resistance and improves switching efficiency and performance.
Domain and module applications：
Application fields and module examples
The excellent performance of FB3207Z-VB makes it widely used in many fields and modules:
1. **High-power power switch**
In power switch applications that need to handle high current and high power, the extremely low on-resistance and high current carrying capacity of FB3207Z-VB enable it to effectively manage power loss and ensure efficient operation of the power system.
2. **Power management system**
Suitable for power management systems, such as battery management and power regulation circuits. Its low on-resistance can improve the overall efficiency of the system and maintain stable performance under high current conditions.
3. **Electric vehicle drive system**
In the motor drive system and battery management of electric vehicles, FB3207Z-VB can handle high current loads, support the high power requirements of electric vehicles, and enhance the performance and reliability of electric vehicles.
4. **Power Amplifier**
Suitable for use in power amplifiers, especially where high current output is required. Its high current capability and low on-resistance can effectively handle high current signals in amplifiers.
5. **High Power Converters**
In high power converters such as power inverters and switching power supplies, the FB3207Z-VB provides efficient current switching and conversion functions, suitable for handling high power conversion requirements.
The high current handling capability and low on-resistance of this MOSFET make it an ideal choice for handling high power applications, providing excellent performance for a variety of high power electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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