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F9Z10-VB Product details

Product introduction:

F9Z10-VB MOSFET Product Introduction

The F9Z10-VB is a high-performance P-channel metal oxide semiconductor field effect transistor (MOSFET) in a TO220 package. It is designed to handle medium voltage environments and has a drain-source voltage (VDS) of -60V and a gate-source voltage (VGS) of ±20V. Its gate threshold voltage (Vth) is -1.7V, enabling switching operations at lower gate voltages. The F9Z10-VB uses trench technology to provide low on-resistance (RDS(ON)) of 74mΩ (VGS=4.5V) and 62mΩ (VGS=10V), respectively, and can handle drain currents (ID) of up to -40A. These features make the F9Z10-VB very suitable for applications that require high current and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-P -60V -1.7V -40A 62mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-P -60V -1.7V -40A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-P -60V -1.7V -40A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-P
F9Z10-VB MOSFET Detailed parameter description

- **Package type (Package): ** TO220
- **Configuration (Configuration): ** Single-P-Channel
- **Drain-source voltage (VDS): ** -60V
- **Gate-source voltage (VGS): ** ±20V
- **Gate threshold voltage (Vth): ** -1.7V
- **On-resistance (RDS(ON)): **
- 74mΩ @ VGS=4.5V
- 62mΩ @ VGS=10V
- **Drain current (ID): ** -40A
- **Technology type (Technology): ** Trench

Domain and module applications:

F9Z10-VB MOSFET Applicable fields and application modules

F9Z10-VB MOSFET is suitable for multiple application fields due to its high current and low on-resistance, including:

1. **Power management system:** F9Z10-VB is very suitable for use in power management systems such as DC-DC converters and switching power supplies. Its low on-resistance and high current handling capability can improve power conversion efficiency and reduce power loss.

2. **Load switch:** This MOSFET can handle high current loads and is suitable for a variety of load switching applications, including battery management, LED drive and motor control. Its high drain current capability and low on-resistance can effectively improve switching efficiency and reduce power consumption.

3. **Power converter:** In power converters, F9Z10-VB can support high current applications in the medium voltage range. It is suitable for power conversion modules such as boost, buck and flyback converters, providing stable and reliable switching performance.

4. **Motor drive:** F9Z10-VB performs well in motor drive applications and can control the operation of high current motors. Its high current handling capability and low on-resistance ensure stable operation and high efficiency of the motor.

5. **Power protection circuit:** In the power protection circuit, F9Z10-VB can provide overcurrent protection and overvoltage protection. Its excellent switching characteristics and high current capability make it suitable for high power protection applications, improving the safety and reliability of the system.

F9Z10-VB MOSFET is very suitable for application scenarios that require high efficiency and high reliability due to its high current and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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