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F9952Q-VB Product details

Product introduction:

F9952Q-VB MOSFET Product Introduction

F9952Q-VB is a dual-channel MOSFET that integrates N-channel and P-channel MOSFETs and adopts SOP8 package. It supports a maximum drain-to-source voltage (VDS) of ±30V and a gate-to-source voltage (VGS) of ±20V. This MOSFET has a low threshold voltage, where the threshold voltage of the N-channel is 1.6V and the threshold voltage of the P-channel is -1.7V. F9952Q-VB adopts Trench technology, and the on-resistance (RDS(ON)) of the N-channel MOSFET is 24mΩ at VGS of 4.5V and 18mΩ at VGS of 10V; the on-resistance (RDS(ON)) of the P-channel MOSFET is 50mΩ at VGS of 4.5V and 40mΩ at VGS of 10V. It can handle a maximum continuous drain current of ±8A. This MOSFET is suitable for dual-channel switching applications, providing efficient current control and reliable performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
Detailed parameter description

1. **Package**: SOP8
- SOP8 package is used, suitable for medium power applications, with good heat dissipation and compact appearance.

2. **Configuration**: Dual-channel N+P-Channel
- Integrates one N-channel and one P-channel MOSFET, suitable for bidirectional switching and current control applications.

3. **VDS (Drain to Source Voltage)**: ±30V
- Maximum voltage between drain and source, suitable for medium voltage application scenarios.

4. **VGS (Gate to Source Voltage)**: ±20V
- Maximum voltage between gate and source, ensuring the stability of MOSFET under different driving conditions.

5. **Vth(Threshold Voltage)**:
- N-channel: 1.6V
- P-channel: -1.7V
- Minimum gate-to-source voltage required to turn on the MOSFET, suitable for low voltage drive circuits.

6. **RDS(ON)(On-resistance)**:
- N-channel:
- 24mΩ at VGS=4.5V
- 18mΩ at VGS=10V
- P-channel:
- 50mΩ at VGS=4.5V
- 40mΩ at VGS=10V
- Low on-resistance helps reduce power loss and improve switching efficiency.

7. **ID(Continuous Drain Current)**: ±8A
- Maximum continuous current of the MOSFET at a specific VGS, suitable for handling medium current loads.

8. **Technology**: Trench
- Using Trench technology, it provides low on-resistance and high current handling capability to ensure efficient switching performance.

Domain and module applications:

Application Examples

The dual-channel configuration and high-efficiency performance of the F9952Q-VB MOSFET make it widely used in multiple fields and modules. Here are some specific application examples:

1. **Bidirectional Switch Application**:
- The F9952Q-VB is suitable for bidirectional switch applications such as H-bridge drive circuits and motor reverse control. Its dual-channel design of N-channel and P-channel enables it to provide flexible switching options in load control, suitable for scenarios such as motor control, inverters, and bidirectional power switching.

2. **Power Management**:
- In power management systems, the F9952Q-VB can be used for power switching and load management. Its low on-resistance and high current handling capability make it ideal for switch control in DC-DC converters, power switch modules, and battery management systems.

3. **Load Switch**:
- The F9952Q-VB performs well in load switch applications and is suitable for load switching and current protection in switching power supplies. Its dual-channel MOSFET design allows for effective switching control under different load conditions, reducing power losses and improving system reliability.

4. **Power Tools**:
- In power tools, the F9952Q-VB can be used for switch control and current regulation. Its high current handling capability and dual-channel configuration make it suitable for use in the drive circuit and switch control of power tools, providing reliable performance and efficient current management.

In summary, with its dual-channel configuration and efficient performance, the F9952Q-VB MOSFET is suitable for use in applications such as bidirectional switches, power management, load switches, and power tools, which can significantly improve the performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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