Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
F9389-VB MOSFET Detailed parameter description
- **Package type (Package): ** SOP8
- **Configuration (Configuration): ** Dual-N+P-Channel
- **Drain-source voltage (VDS): ** ±30V
- **Gate-source voltage (VGS): ** ±20V
- **Gate threshold voltage (Vth): **
- N channel: 1.6V
- P channel: -1.7V
- **On-resistance (RDS(ON)): **
- N channel:
- 24mΩ @ VGS=4.5V
- 18mΩ @ VGS=10V
- P channel:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
- **Drain current (ID): ** ±8A
- **Technology type:** Trench
Domain and module applications：
F9389-VB MOSFET Applicable fields and application modules
F9389-VB MOSFET is widely used in multiple fields and modules due to its dual-channel design and high-efficiency characteristics:
1. **Power management and switching:** Due to its dual N-channel and P-channel configuration, F9389-VB is suitable for power switching and power management systems such as DC-DC converters and switching power supplies. Its low on-resistance and high current handling capability enable efficient switching control in high-efficiency power management.
2. **H-bridge circuit:** The dual-channel configuration of F9389-VB makes it ideal for use in H-bridge circuits for motor drive and direction control. Its symmetrical N-channel and P-channel design can effectively control the forward and reverse rotation of the motor and provide a stable drive signal.
3. **Load switch:** In load switch applications, F9389-VB is able to handle high current loads such as LED drive and battery management. Its low on-resistance and dual-channel configuration enable it to effectively control the load, ensuring efficient and reliable switching operation.
4. **Power converter:** F9389-VB is suitable for use in various power converters and regulators, such as boost converters and buck converters. Its high-efficiency switching characteristics help improve power conversion efficiency and reduce system energy consumption.
5. **Electronic switch and protection circuit:** In electronic switch and protection circuits, F9389-VB can provide reliable switching control and protection functions. Its dual-channel design enables flexible switching operation and protection control in a variety of applications.
With its dual-channel design and excellent performance characteristics, F9389-VB MOSFET is an ideal choice for various power management and switching applications, meeting the needs of high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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