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F8915-VB Product details

Product introduction:

F8915-VB MOSFET Product Introduction

The F8915-VB is a high-performance dual N-channel MOSFET in a SOP8 package, designed for low-voltage, high-efficiency applications. With a maximum drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±12V, this MOSFET is suitable for scenarios requiring lower voltage operation. Its threshold voltage (Vth) ranges from 0.5V to 1.5V, ensuring efficient conduction at lower gate voltages. The on-resistance (RDS(ON)) of the F8915-VB is 26mΩ at a 4.5V gate drive and drops to 19mΩ at a 10V gate drive, which can effectively reduce power consumption and improve overall system efficiency. Its continuous drain current capability of 7.1A enables it to perform well in a variety of applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A 19mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
F8915-VB MOSFET Detailed parameter description

- **Package type**: SOP8
- **Configuration**: Dual N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V~1.5V
- **On-resistance (RDS(ON))**:
- 26mΩ @ VGS=4.5V
- 19mΩ @ VGS=10V
- **Continuous drain current (ID)**: 7.1A
- **Technology**: Trench

Domain and module applications:

Application fields and modules

F8915-VB MOSFET is suitable for the following fields and modules due to its dual N-channel configuration, low threshold voltage and low on-resistance:

1. **Low voltage switching circuit**: F8915-VB performs well in low voltage switching applications. Its maximum drain-source voltage of 20V and low threshold voltage make it particularly suitable for use in low voltage DC-DC converters, battery management systems and load switch circuits, providing efficient current control and switching functions.

2. **Power management**: In power management modules, the dual N-channel structure of F8915-VB enables it to handle both positive and negative power switches, which is suitable for efficient switching and current distribution in power management systems, helping to improve the overall efficiency and stability of the system.

3. **DC-DC converter**: F8915-VB is very suitable for efficient DC-DC converter applications. Its low on-resistance and high continuous drain current capability can optimize conversion efficiency and ensure stable operation in low voltage environments.

4. **Electronic devices**: The high performance and small package of the F8915-VB are ideal for power management and load control in portable electronic devices such as smartphones, tablets, and other portable devices, helping to extend device battery life and improve performance.

5. **Low-power motor drive**: The F8915-VB can also be used in low-power motor drive systems, such as control of small motors and fans. Its dual N-channel configuration allows for efficient motor switching control in one package, simplifying circuit design.

With its excellent switching performance and low on-resistance, the F8915-VB MOSFET provides reliable performance in a variety of low-voltage, high-efficiency application scenarios, meeting the needs of modern electronic devices and systems for high performance and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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