Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
10A |
|
|
9mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
10A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
10A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: SOP8
- The SOP8 package provides compact size and good heat dissipation, suitable for space-limited electronic devices and board-level applications.
2. **Configuration**: Dual N-channel
- Contains two N-channel MOSFETs, suitable for applications requiring dual-channel switches, such as bridge circuits and bidirectional switches.
3. **Drain-source voltage (VDS)**: 20V
- The maximum drain-source voltage that can be tolerated, suitable for low-voltage applications.
4. **Gate-source voltage (VGS)**: ±12V
- The maximum voltage range that can be applied between the gate and the source, supporting higher gate voltage control.
5. **Threshold voltage (Vth)**: 0.5V~1.5V
- The minimum gate-source voltage required to start the MOSFET, suitable for low-voltage driving conditions.
6. **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- The resistance between the drain and the source in the on state. The lower RDS(ON) enables lower power consumption in high current applications.
7. **Continuous drain current (ID)**: 10A
- The maximum continuous current that the MOSFET can withstand under rated conditions, ensuring stability under high current load conditions.
8. **Technology**: Trench
- Trench technology provides low on-resistance and efficient switching performance, suitable for applications with high current and high efficiency requirements.
Domain and module applications：
Application Examples
The F8910-VB MOSFET is widely used in the following fields due to its low voltage handling capability and low on-resistance:
1. **DC-DC Converter**: The low on-resistance and high current handling capability of the F8910-VB make it suitable for use in DC-DC converters. The dual N-channel configuration allows for efficient switching and regulation in the converter, improving conversion efficiency and reducing energy losses.
2. **Power Management**: In power management systems that require high performance and low power consumption, such as portable electronic devices and computer power supplies, the F8910-VB can provide stable current regulation and low power consumption control, improving the overall efficiency of the power system.
3. **Motor Driver**: This MOSFET is suitable for motor drive applications that require low voltage and high current, such as stepper motor drivers and DC motor control systems, providing efficient switching and current regulation functions.
4. **Bidirectional Switch**: The dual N-channel configuration of F8910-VB makes it very suitable for bidirectional switch applications such as H-bridge circuits and switching circuits. It can provide reliable bidirectional switching functions in the circuit and is suitable for various load control scenarios.
5. **Home Appliances**: Due to its high current handling capability and low power consumption, F8910-VB is suitable for home appliances that require efficient power control, such as smart home devices and small appliances, ensuring high efficiency and stability of the power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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