Product introduction：
F8788-VB MOSFET Product Introduction
F8788-VB is a high-performance single N-channel MOSFET in SOP8 package, designed for medium and low voltage and high current applications. Its maximum drain-to-source voltage (VDS) is 30V, the gate-to-source voltage (VGS) tolerance is ±20V, and the threshold voltage (Vth) is 1.7V, which is suitable for low voltage drive. Using Trench technology, F8788-VB has a very low on-resistance (RDS(ON)), which is 4mΩ (VGS=4.5V) and 3mΩ (VGS=10V), respectively, and can handle a continuous drain current of up to 25A. This MOSFET is ideal for power management and power control systems that require high switching efficiency and low power loss.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
25A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
25A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
25A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: SOP8
- The small SOP8 package is suitable for compact circuit board design and has good heat dissipation performance.
2. **Configuration**: Single N-channel
- Provides an N-channel MOSFET, suitable for unidirectional current control and switching applications.
3. **VDS (Drain to Source Voltage)**: 30V
- The maximum voltage between the drain and the source, suitable for low voltage application scenarios.
4. **VGS (Gate to Source Voltage)**: ±20V
- The maximum voltage between the gate and the source, ensuring the stability of the MOSFET under different driving conditions.
5. **Vth (Threshold Voltage)**: 1.7V
- The minimum gate to source voltage required to start the MOSFET, suitable for low voltage drive circuits.
6. **RDS(ON)**:
- 4mΩ at VGS=4.5V
- 3mΩ at VGS=10V
- Low on-resistance helps reduce power loss and improve switching efficiency.
7. **ID(Continuous Drain Current)**: 25A
- The maximum continuous current of the MOSFET at a specific VGS, suitable for handling medium current loads.
8. **Technology**: Trench
- Trench technology is used to achieve low on-resistance and high current handling capability, ensuring efficient switching performance.
Domain and module applications：
Application Examples
The high switching efficiency and low power loss characteristics of the F8788-VB MOSFET make it widely used in multiple fields and modules. Here are some specific application examples:
1. **Power Management**:
- The F8788-VB is ideal for power management systems such as DC-DC converters and voltage regulators. Its low on-resistance and high current handling capability enable it to efficiently manage power, suitable for computer power supplies, industrial power supplies, and high-efficiency battery management systems.
2. **Power Switch**:
- In power switching applications, the F8788-VB can be used for switching power supplies, load switches, and motor drivers. Its low power loss and high current capability make it ideal for motor control and load switching scenarios that require high switching efficiency.
3. **Switching Power Supply**:
- The F8788-VB excels in switching power supply design and is suitable for a variety of switching power supply applications, including power modules for home appliances and power systems for communication equipment. Its high switching speed and low on-resistance ensure high performance and reliability.
4. **High-efficiency battery management**:
- In battery management systems, the F8788-VB is capable of handling high currents and is suitable for use in battery protection circuits and battery chargers. Its low on-resistance helps reduce power losses and improves the overall efficiency and safety of the battery system.
In summary, the F8788-VB MOSFET is suitable for use in applications such as power management, power switching, switching power supplies, and battery management with its low on-resistance, high current handling capability, and high switching efficiency, which can significantly improve system performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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