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F840B-VB Product details

Product introduction:

F840B-VB MOSFET Product Introduction

The F840B-VB is a high-voltage single N-channel MOSFET in a TO220 package, designed for high voltage and high power applications. The MOSFET can withstand a drain-source voltage (VDS) of up to 500V and a gate-source voltage (VGS) of ±30V, giving it excellent stability and reliability in high voltage environments. Its threshold voltage (Vth) is 3.1V, enabling reliable conduction at appropriate gate voltages. Although the on-resistance (RDS(ON)) of 660mΩ at a 10V gate drive is relatively high, it still provides stable performance in handling high voltage applications. With a continuous drain current capability of 13A, this MOSFET is suitable for a variety of applications requiring high voltage and high current.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 500V 3.1V 13A 660mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 500V 3.1V 13A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 500V 3.1V 13A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
F840B-VB MOSFET Detailed parameter description

- **Package type**: TO220
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.1V
- **On-resistance (RDS(ON))**:
- 660mΩ @ VGS=10V
- **Continuous drain current (ID)**: 13A
- **Technology**: Plannar

Domain and module applications:

Applications and modules

The high withstand voltage characteristics and stable current capability of the F840B-VB MOSFET enable it to excel in the following areas and modules:

1. **High-voltage power management**: The F840B-VB is ideal for high-voltage power management systems such as high-voltage DC-DC converters and power supply modules. Its maximum drain-source voltage of 500V allows stable power switching operations under high-voltage environments, suitable for application scenarios that require high-voltage switching.

2. **Power amplifier**: In power amplifiers, the high voltage withstand capability of the F840B-VB enables it to operate stably under high voltage conditions, suitable for amplifier circuits that require high power handling, such as audio power amplifiers and RF power amplifiers.

3. **Inverters and inverters**: The F840B-VB can be used as a switching element in inverters and inverters, and its high withstand voltage characteristics enable it to handle high voltage inputs, ensuring efficient conversion of electrical energy. This makes it particularly suitable for use in industrial-grade inverters and solar inverters.

4. **Motor drive control**: In motor drive systems, the F840B-VB can be used as a high voltage switch to control the start, stop and speed regulation of the motor. Its high voltage capability ensures reliability in high voltage motor drive environments.

5. **High voltage switch**: The high withstand voltage characteristics of the F840B-VB also make it an ideal choice for high voltage switch applications, such as high power power switches and power control modules, which can operate stably under high voltage and high current conditions.

With its excellent high voltage withstand capability and stable current handling performance, the F840B-VB MOSFET performs well in a variety of high voltage and high power applications, providing reliable electrical performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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