Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
500V |
|
3.1V |
13A |
|
|
660mΩ |
Plannar |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
500V |
|
3.1V |
13A |
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
500V |
|
3.1V |
13A |
|
Plannar |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: TO220
- TO220 package provides good heat dissipation and stable mechanical support, suitable for medium to high power applications.
2. **Configuration**: Single N-channel
- Consists of an N-channel transistor, suitable for switching and regulation applications.
3. **Drain-source voltage (VDS)**: 500V
- The maximum voltage between the drain and the source that can be tolerated, suitable for high voltage applications.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum voltage range that can be applied between the gate and the source, supporting higher gate voltage control.
5. **Threshold voltage (Vth)**: 3.1V
- The minimum gate-source voltage required to start the MOSFET, suitable for high voltage driving conditions.
6. **On-resistance (RDS(ON))**: 660mΩ @ VGS=10V
- In the on state, the resistance between the drain and the source indicates the power consumption of the MOSFET when switching. The moderate RDS(ON) makes it perform well in medium power applications.
7. **Continuous drain current (ID)**: 13A
- Under rated conditions, the maximum continuous current that the MOSFET can withstand, ensuring stability under load conditions.
8. **Technology**: Planar
- Planar technology provides higher voltage resistance and current handling capabilities, suitable for high voltage applications.
Domain and module applications：
Application Examples
F840A-VB MOSFET is widely used in the following fields due to its high voltage handling capability and moderate on-resistance:
1. **High Voltage Switching Power Supply**: The 500V drain-source voltage of F840A-VB makes it suitable for high voltage switching power supply applications such as AC-DC converters and DC-DC converters. This MOSFET can effectively handle and regulate high voltages, ensuring the stability and reliability of the power supply system.
2. **Motor Drive**: In motor drive applications that require medium current and high voltage, such as industrial motor drives and servo motor control systems, F840A-VB is able to provide stable current regulation functions to ensure the reliability of motor operation.
3. **Industrial Power Management**: Due to its high voltage capability of 500V, F840A-VB is well suited for industrial power management systems such as power conversion and distribution systems, which can operate stably under high voltage load conditions.
4. **Home Appliances**: This MOSFET is suitable for home appliances that require high voltage and medium power management, such as high-voltage electric heaters and air conditioning systems, providing stable power control and switching functions.
5. **Power Electronics**: The TO220 package and high voltage handling capability of the F840A-VB make it suitable for use in power electronic devices such as inverters and electric vehicle chargers, which need to stably handle high voltages and large current loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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