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F7338-VB Product details

Product introduction:

Product Introduction

F7338-VB is a bipolar MOSFET with SOP8 package type, configured as dual N-channel and P-channel MOSFET. This MOSFET is designed for drain-source voltage (VDS) of ±30V and is suitable for use in bipolar voltage applications. The configuration of N-channel and P-channel enables it to handle bidirectional current, providing a flexible power management solution. The continuous drain current (ID) of F7338-VB is ±8A, and the threshold voltage (Vth) is 1.6V and -1.7V respectively. Its on-resistance (RDS(ON)) is 24mΩ (N-channel) and 50mΩ (P-channel) at VGS=4.5V, and 18mΩ (N-channel) and 40mΩ (P-channel) at VGS=10V. The F7338-VB with Trench technology exhibits excellent performance in bipolar current switching.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
Detailed parameter description

- **Package type**: SOP8
- **Configuration**: Dual N+P channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N channel: 1.6V
- P channel: -1.7V
- **On-resistance (RDS(ON))**:
- N channel:
- 24mΩ @ VGS=4.5V
- 18mΩ @ VGS=10V
- P channel:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
- **Continuous drain current (ID)**: ±8A
- **Technology**: Trench

Domain and module applications:

Applications and Modules

The bipolar design and high current handling capability of the F7338-VB MOSFET enable it to excel in the following areas and modules:

1. **DC-DC Converter**: In DC-DC converters, the F7338-VB can be used as an efficient switching element to handle bidirectional currents. Its N-channel and P-channel configurations allow for efficient current switching and power management in converters, especially in synchronous rectification applications.

2. **Motor Drive**: In motor drive systems, the F7338-VB is capable of handling bidirectional currents and is suitable for motor control in H-bridge circuits. Its bipolar MOSFET configuration allows for efficient forward and reverse control of the motor and improves the overall system energy efficiency.

3. **Power Management**: In power management applications, the F7338-VB can be used for efficient power switching and load management. Its high current capability and low on-resistance make it suitable for high-power power management and protection circuits.

4. **Inverter**: In the inverter, the dual N-channel and P-channel MOSFETs of the F7338-VB can effectively handle the bidirectional switching of AC current, ensuring that the inverter maintains efficient and stable performance when converting voltage.

5. **Consumer Electronics**: The F7338-VB is also suitable for bidirectional switching applications in various consumer electronics products, such as battery management systems and power control modules for portable devices. Its compact SOP8 package and high efficiency performance are suitable for use in space-constrained electronic devices.

The F7338-VB MOSFET is suitable for use in bidirectional current applications due to its bipolar design and high current handling capability, providing a flexible and efficient power management solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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