Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.8/-1.7V |
10/-8A |
|
|
11/21mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.8/-1.7V |
10/-8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.8/-1.7V |
10/-8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
2. ELM34601AA-N-VB Detailed parameter description
- **Package type**: SOP8
- **Configuration**: Dual N+P channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N channel: 1.8V
- P channel: -1.7V
- **On-resistance (RDS(ON))**:
- N channel:
- 13mΩ @ VGS = 4.5V
- 11mΩ @ VGS = 10V
- P channel:
- 28mΩ @ VGS = 4.5V
- 21mΩ @ VGS = 10V
- **Drain current (ID)**:
- N-channel: 10A
- P-channel: -8A
- **Technology**: Trench
Domain and module applications：
3. Application fields and modules of ELM34601AA-N-VB
ELM34601AA-N-VB MOSFET plays an important role in the following fields and modules:
1. **Power management module**:
- **DC-DC converter**: In the DC-DC converter, ELM34601AA-N-VB provides efficient switching control as a dual-channel MOSFET, which can handle positive and negative voltages in the same chip, optimize power conversion efficiency and reduce the number of components, thereby reducing costs and improving system integration.
2. **Load switch**:
- **Portable device**: In portable devices such as smartphones and tablets, ELM34601AA-N-VB is used for efficient load switch control. The dual N+P channel configuration can realize the switch control of the device, adapt to different power requirements, and improve the functionality and performance of the device.
3. **Battery Management System**:
- **Battery Protection Circuit**: In the battery management system, this MOSFET is used for battery protection and switch control. Due to its low on-resistance and dual-channel design, it can effectively switch positive and negative currents to protect the battery from overcurrent or short circuit damage.
4. **Automotive Electronics**:
- **In-Vehicle Power Management**: In automotive electronic systems, ELM34601AA-N-VB is used to control the switching operation of on-board electrical appliances. Dual-channel MOSFET can effectively manage the positive and negative voltage requirements in the car, such as electric windows, lighting systems, etc., to improve the reliability and response speed of the system.
5. **Motor Drive**:
- **H-bridge Circuit**: In motor drive applications, ELM34601AA-N-VB can be used in H-bridge circuits to provide bidirectional control of the motor. Its dual N+P channel design allows the motor to be operated forward, backward and brake to meet various motor drive needs.
The dual-channel design and high-performance features of the ELM34601AA-N-VB enable it to excel in a variety of power and load management applications, providing a flexible and efficient solution for modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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