Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-5.8A |
|
|
33mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-5.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-5.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: SOP8
- **Device configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 56mΩ @ VGS=4.5V
- 33mΩ @ VGS=10V
- **Maximum drain current (ID)**: -5.8A
- **Technology**: Trench technology (trench gate technology)
Domain and module applications:
Applications and modules
**ELM34417AA-N-VB** MOSFET has a wide range of application potentials in a variety of fields and modules, especially in scenarios where negative voltage control is required. For example:
1. **Power management system**: In negative voltage power management systems, ELM34417AA-N-VB can efficiently handle negative voltage switch control. It is suitable for power converters and regulators, providing stable current control and reducing power consumption.
2. **Negative voltage switch application**: In switch modules that need to handle negative voltages, such as negative power switches, negative voltage regulator modules, etc., the high conduction capability and low on-resistance of ELM34417AA-N-VB enable it to effectively control negative current and improve the overall performance of the system.
3. **Power management and protection circuits**: In power management circuits and overcurrent protection circuits, this MOSFET can be used as an efficient switching component to ensure reliable current control and protect the system from overcurrent and overheating.
4. **Communications**: In negative voltage communications devices, such as RF amplifiers and RF switch modules, the low on-resistance and high current handling capabilities of the ELM34417AA-N-VB enable it to effectively improve signal transmission quality and device stability.
These applications demonstrate the high performance and reliability of the ELM34417AA-N-VB in negative voltage environments, making it suitable for a variety of modern electronic devices that require negative voltage switching and high current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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