Product introduction：
1. ELM14902AA-N-VB Product Introduction
ELM14902AA-N-VB is a dual-channel N-type MOSFET in SOP8 package, designed for medium current and low voltage switching applications. This MOSFET contains two N-type channels, providing efficient switching performance, suitable for circuits requiring high-density integration and low conduction losses. Its drain-source breakdown voltage (VDS) is 30V and the gate-source voltage (VGS) is ±20V, which can handle common voltage applications. The threshold voltage (Vth) of ELM14902AA-N-VB is 1.7V, ensuring effective conduction even at low gate drive voltage. Using Trench technology, the on-resistance of this MOSFET is 26mΩ at VGS=4.5V and 22mΩ at VGS=10V, and the maximum drain current (ID) is 6.8A and 6.0A. This product is very suitable for applications such as load switching, power management and signal switching.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
|
22mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
II. ELM14902AA-N-VB Detailed parameter description
1. **Package type**: SOP8
- The SOP8 package design is compact and suitable for high-density circuit board applications, with good heat dissipation performance and space utilization.
2. **Channel configuration**: Dual-channel N-type + N-type
- Contains two N-type MOSFET channels, which can provide dual switching functions on the same chip, suitable for dual-channel applications.
3. **Drain-source breakdown voltage (VDS)**: 30V
- The maximum drain-source breakdown voltage is 30V, which is suitable for medium and low voltage switch applications, ensuring stable operation in actual work.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum voltage that the gate can withstand is ±20V, providing reliable overvoltage protection and ensuring the stability and durability of the device.
5. **Threshold voltage (Vth)**: 1.7V
- The threshold voltage is 1.7V, which enables the device to turn on at a lower gate voltage, making it suitable for low-voltage drive applications.
6. **On-resistance (RDS(ON))**:
- **26mΩ @ VGS=4.5V**: On-resistance at a gate drive voltage of 4.5V.
- **22mΩ @ VGS=10V**: On-resistance at a gate drive voltage of 10V.
7. **Drain current (ID)**:
- **6.8A**: Maximum drain current in one channel.
- **6.0A**: Maximum drain current in the other channel.
8. **Technology Type**: Trench
- Using Trench technology, it has low on-resistance and high-efficiency switching performance, suitable for high-efficiency circuit design.
Domain and module applications：
III. ELM14902AA-N-VB Application Fields and Modules
1. **Power Management**
- In power management circuits, ELM14902AA-N-VB can be used as an efficient switching element for voltage conversion and power distribution. Its low on-resistance helps reduce energy loss and improve the overall efficiency of the power system.
2. **Load Switch**
- Suitable for load switch applications in battery-powered devices and other portable electronic products. ELM14902AA-N-VB can provide reliable switching functions, control the switching state of the load, and ensure the stability of the equipment under different working conditions.
3. **Power Management**
- In power management modules, this MOSFET can be used as an efficient switching element to achieve efficient power conversion and distribution, especially in situations where low conduction losses are required.
4. **Signal Switch**
- Suitable for circuits that require efficient signal switching, such as multiplexers and signal processors. ELM14902AA-N-VB provides low on-resistance, ensuring the integrity and reliability of signal transmission.
5. **DC-DC Converter**
- In a DC-DC converter, ELM14902AA-N-VB can be used as a switching element to improve conversion efficiency, especially in low voltage and medium current applications. Its efficient switching performance can improve the overall performance of the converter.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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