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DTS2012-VB Product details

Product introduction:

Product Introduction

**DTS2012-VB** is a high-performance N-channel MOSFET in SC70-3 package. This MOSFET adopts Trench technology, which has efficient current conduction capability and low on-resistance. The maximum drain-source voltage (VDS) of DTS2012-VB is 20V, which is suitable for low-voltage applications. Its gate-source voltage (VGS) is rated at ±12V, ensuring good operating stability. The gate-source threshold voltage (Vth) of this MOSFET ranges from 0.5V to 1.5V, and has low on-resistance: 48mΩ (VGS=2.5V), 40mΩ (VGS=4.5V) and 36mΩ (VGS=10V) at different gate-source voltages. Its maximum drain current (ID) is 4A, making it suitable for a variety of small and medium current applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-3 Single-N 20V 0.5~1.5V 4A 48mΩ 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-3 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-3 Single-N 20V 0.5~1.5V 4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-3 Single-N 20V 0.5~1.5V 4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-3 Single-N
Detailed parameter description

- **Package**: SC70-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Gate-source threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 48mΩ @ VGS = 2.5V
- 40mΩ @ VGS = 4.5V
- 36mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 4A
- **Technology**: Trench

Domain and module applications:

Applications and module examples

1. **Portable electronics**: The DTS2012-VB is ideal for power switching and load driving in portable electronics such as smartphones and tablets due to its compact SC70-3 package and low on-resistance. Its high efficiency and small package can help reduce the overall size of the device and improve battery life.

2. **Consumer products**: In various consumer electronics products, such as portable audio and game consoles, the DTS2012-VB can be used for power management and motor drive applications. Its low RDS(ON) can reduce power consumption and improve the energy efficiency and performance of the product.

3. **Low-power power modules**: This MOSFET is also suitable for low-power power modules such as DC-DC converters and power adapters. Its efficient current conduction capability and low on-resistance help improve conversion efficiency and reduce heat generation.

4. **LED drive circuit**: In LED drive circuits, the DTS2012-VB can be used as a switching element. Its small package and high current handling capability make it ideal for high-density LED lighting applications, ensuring stable light output.

5. **Communication Equipment**: In communication equipment, DTS2012-VB can be used for signal amplification and switching applications. Its low RDS(ON) and high switching speed enable it to handle high-speed signals, ensuring the stability and performance of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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