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DTP11N60SJ-VB Product details

Product introduction:

Product Introduction
DTP11N60SJ-VB is a high-voltage single N-channel MOSFET packaged in TO220, using SJ_Multi-EPI (Super Junction Multilayer Epitaxy) technology. This MOSFET is designed for high-voltage applications and can withstand drain-source voltages up to 600V while providing 11A of drain current capability. Its SJ_Multi-EPI technology provides excellent conductivity and switching characteristics, enabling it to perform well in high-voltage and high-power environments. DTP11N60SJ-VB is suitable for applications such as power electronics and industrial control that require high voltage and high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 600V 3.5V 11A 380mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 600V 3.5V 11A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 600V 3.5V 11A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description
- **Package type**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 380mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI (super junction multilayer epitaxial) technology

Domain and module applications:

Application fields and module examples
1. **Power conversion**: The high drain-source voltage and relatively low on-resistance of the DTP11N60SJ-VB make it very suitable for high-voltage power converters such as switch mode power supplies (SMPS) and inverters. In these applications, it can effectively handle switching operations under high voltage conditions, ensuring the stability and efficiency of the power system.

2. **Industrial control**: In industrial control systems, the DTP11N60SJ-VB can be used for power switches and protection switches. For example, in motor control, power relay drive, and high-voltage load control, this MOSFET can provide high current carrying capacity and maintain stable performance under high power conditions, suitable for industrial automation and control applications.

3. **High-voltage equipment**: This MOSFET is also suitable for various high-voltage equipment, such as power conversion equipment and high-voltage test instruments. Its 600V withstand voltage and low on-resistance enable it to work stably in high voltage environments, ensuring the reliability and high efficiency of the equipment in long-term use.

The high voltage carrying capability and good switching performance of DTP11N60SJ-VB make it excel in the fields of power electronics and industrial control, providing a reliable solution for high voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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