Featured Model

Your present location > Home page > Featured Model

DTP11N50SJ-VB Product details

Product introduction:

Product Introduction: DTP11N50SJ-VB

DTP11N50SJ-VB is a high voltage N-channel MOSFET using SJ_Multi-EPI technology and packaged in TO220. It is designed for high voltage and high power applications and has excellent voltage resistance and low on-resistance. The drain-source voltage (VDS) of this MOSFET can reach 500V, and the gate-source voltage (VGS) is rated at ±30V, which can operate stably under high voltage conditions. Its maximum drain current (ID) is 11A and the on-resistance (RDS(ON)) is 380mΩ @ VGS=10V. The DTP11N50SJ-VB is very suitable for high voltage switches, power management systems and various industrial applications, and can provide reliable performance in harsh operating environments.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 500V 3.2V 11A 380mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 500V 3.2V 11A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 500V 3.2V 11A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description:

- **Package type**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.2V
- **On-resistance (RDS(ON))**:
- 380mΩ @ VGS=10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Application fields and module examples:

1. **High voltage switch applications**:
- **Application examples**: High voltage inverters, switching power supplies.
- **Reason**: The 500V withstand voltage and 11A current carrying capacity of the DTP11N50SJ-VB make it very suitable for use in high voltage inverters and switching power supplies, and can stably switch and control current in high voltage environments.

2. **Power management system**:
- **Application examples**: High voltage power regulators, DC-DC converters.
- **Reason**: Due to its low on-resistance and high withstand voltage, this MOSFET is suitable for high voltage power regulation and power conversion in power management systems, providing high efficiency and stability.

3. **Industrial power modules**:
- **Application examples**: Industrial equipment power modules, power drivers.
- **Reason**: In industrial applications, DTP11N50SJ-VB can handle high voltage loads and is suitable for power modules and power drivers of industrial equipment to ensure reliable operation of equipment under high voltage and high power conditions.

4. **High voltage protection circuit**:
- **Application examples**: Overvoltage protector, voltage monitoring circuit.
- **Reason**: Its high VDS capability enables it to perform well in high voltage protection circuits, effectively preventing circuits from being damaged by overvoltage and providing stable protection and monitoring functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat