Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
900V |
|
3V |
10A |
|
|
750mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
900V |
|
3V |
10A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
900V |
|
3V |
10A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS = 10V
- **Drain current (ID)**: 10A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications:
Applications and module examples
1. **High-voltage power converter**: The DTP10N90SJ-VB is ideal for high-voltage power converters such as AC-DC converters and high-voltage DC-DC converters. Its high drain-source voltage allows it to operate stably under high-voltage input conditions, and its moderate on-resistance can effectively reduce power losses during high-voltage conversion.
2. **Switch-mode power supply (SMPS)**: In a switch-mode power supply, this MOSFET can be used as a high-voltage switching element. Its high voltage handling capability makes it suitable for applications that require high-voltage switching, such as switching operations in power modules, ensuring system stability and efficiency.
3. **Inverters and power amplifiers**: The DTP10N90SJ-VB is suitable for high-power applications such as inverters and power amplifiers. The high voltage and medium current handling capabilities of this MOSFET allow it to operate stably under high-power conditions, helping to improve the overall performance of inverters and power amplifiers.
4. **High voltage protection circuit**: In high voltage protection circuits, this MOSFET can be used as an overvoltage protection and power limiting device. Its high withstand voltage characteristics ensure reliability in high voltage environments and protect other circuit components from overvoltage, thereby improving the safety and stability of the circuit.
These applications demonstrate the wide applicability of the DTP10N90SJ-VB in high voltage and power management, and its high voltage capability and stable performance make it a key power and switching component.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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