Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: SOP8
- Surface mount package, suitable for high-density circuit design, with good heat dissipation performance.
2. **Configuration**: Dual NP channel
- Contains one N channel and one P channel, suitable for symmetrical switching operation.
3. **Drain-source voltage (VDS)**: ±30V
- The maximum drain-to-source voltage that can be tolerated.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum voltage that can be applied between the gate and the source.
5. **Threshold voltage (Vth)**:
- **N channel**: 1.6V
- **P channel**: -1.7V
- The voltage at which the MOSFET starts to turn on.
6. **On-resistance (RDS(ON))**:
- **N-channel**:
- **24mΩ at 4.5V**
- **18mΩ at 10V**
- **P-channel**:
- **50mΩ at 4.5V**
- **40mΩ at 10V**
- The resistance between the drain and source when the MOSFET is fully turned on.
7. **Continuous leakage current (ID)**: ±8A
- The maximum continuous current that the MOSFET can handle.
8. **Technology**: Trench
- A technology that enables low on-resistance and high efficiency switching performance.
Domain and module applications：
Application Examples
The DTM4616-VB MOSFET is suitable for the following fields and modules:
1. **DC-DC Converter**:
- Due to its dual-channel configuration and low on-resistance, the DTM4616-VB is ideal for use in DC-DC converter circuits. The N-channel MOSFET can be used as a high-side switch, while the P-channel MOSFET can be used as a low-side switch. This configuration optimizes power conversion efficiency and is suitable for various power modules such as computer power supplies and communication equipment power supplies.
2. **Motor Drive Circuit**:
- In motor drive applications, the dual-channel design of this MOSFET makes it suitable for use in H-bridge circuits. The N-channel MOSFET and the P-channel MOSFET can be used to control the direction and speed of the motor. Its high current handling capability and low on-resistance ensure high efficiency and stability of the motor drive.
3. **Battery Management System**:
- In the battery management system, the DTM4616-VB can be used for battery protection and switch control. N-channel and P-channel MOSFETs can be used to implement battery charge and discharge control as well as overcurrent and short-circuit protection in protection circuits. Its high current capability and low power consumption characteristics help improve the overall efficiency of the system.
4. **Switching Power Supply and Power Management**:
- In switching power supply and power management applications, DTM4616-VB can be used as a switching element for efficient power switching operations. Its dual-channel configuration allows flexible circuit design and is suitable for various power management modules such as LED driver power supplies and load switches.
The dual NP channel design and low on-resistance characteristics of DTM4616-VB enable it to perform well in multiple high-efficiency circuit applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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