Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.8/-1.7V |
10/-8A |
|
|
11/21mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.8/-1.7V |
10/-8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.8/-1.7V |
10/-8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: SOP8
- The SOP8 package is a small surface mount package suitable for space-constrained applications and provides good heat dissipation performance.
- **Configuration**: Dual N+P-channel
- The device integrates two N-channel MOSFETs and one P-channel MOSFET, suitable for applications requiring high switching efficiency and low power consumption.
- **Drain-source voltage (VDS)**: ±30V
- The device can withstand a voltage difference of positive and negative 30V, suitable for medium voltage applications.
- **Gate-source voltage (VGS)**: ±20V
- The maximum voltage that the gate can withstand is ±20V, which is suitable for a wide range of drive voltages.
- **Threshold voltage (Vth)**:
- **N-channel**: 1.8V
- **P-channel**: -1.7V
- The low threshold voltage allows the device to be turned on at a lower control voltage, improving driving flexibility.
- **On-resistance (RDS(ON))**:
- **N-channel**
- **VGS=4.5V**: 13mΩ
- **VGS=10V**: 11mΩ
- **P-channel**
- **VGS=4.5V**: 28mΩ
- **VGS=10V**: 21mΩ
- Low on-resistance helps reduce power loss and improve overall efficiency.
- **Drain Current (ID)**:
- **N-Channel**: 10A
- **P-Channel**: -8A
- Maximum drain current is suitable for medium power load applications.
- **Technology**: Trench
- Trench technology provides low on-resistance and good switching characteristics, suitable for high-efficiency circuit design.
Domain and module applications：
Applicable fields and module applications
DTM4606BDY-VB MOSFET is widely used in various power management and switching circuits due to its dual-channel configuration and low on-resistance. In the power management module, this MOSFET can be used as an efficient DC-DC converter switch to improve the power conversion efficiency. In the motor driver, it can provide stable switching operation and is suitable for motor control of power tools and household appliances.
In addition, in communication equipment, DTM4606BDY-VB can be used in power switching and voltage regulation circuits to ensure stable operation and power management of the equipment. It is also suitable for use in battery management systems, providing efficient switching control and overcurrent protection, extending battery life and improving the energy efficiency of the equipment.
In general, DTM4606BDY-VB is a high-efficiency device that integrates N-channel and P-channel MOSFETs, suitable for a variety of application scenarios that require efficient switching and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
