Product introduction：
Product Introduction: DOP50N06-VB
DOP50N06-VB is a high-performance N-channel MOSFET manufactured using advanced trench technology and packaged in TO220. This MOSFET has excellent on-resistance characteristics and high current carrying capacity, and is suitable for a variety of high voltage and high current applications. Its drain-source voltage (VDS) is 60V, and the gate-source voltage (VGS) is rated at ±20V, which can operate stably under higher voltage and current conditions. Its maximum drain current (ID) is 60A, and its on-resistance (RDS(ON)) is 11mΩ at VGS = 10V, showing excellent conductivity, and is very suitable for applications requiring efficient current control and low energy loss.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
60A |
|
|
11mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package type**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Maximum drain current (ID)**: 60A
- **Technology**: Trench
Domain and module applications：
Applicable fields and module examples:
1. **Power management system**:
- **Application example**: High-efficiency switching power supplies, DC-DC converters.
- **Reason**: The low RDS(ON) and high current carrying capacity of DOP50N06-VB make it very suitable for use in power management systems, which can achieve efficient energy conversion and control.
2. **Battery-driven equipment**:
- **Application example**: Battery chargers, power tools.
- **Reason**: Due to its high current handling capability and low on-resistance, this MOSFET can provide reliable current control in battery-driven equipment, supporting long-term and efficient operation.
3. **Power amplifier**:
- **Application example**: Audio power amplifier.
- **Reason**: The high current capability and low on-resistance of DOP50N06-VB make it suitable for use in audio power amplifiers, which can effectively drive high-power loads and reduce power losses.
4. **Industrial Control Systems**:
- **Application Examples**: Motor drives, automation control equipment.
- **Reason**: High voltage and high current capabilities enable the DOP50N06-VB to handle high power loads in industrial control systems, providing reliable control and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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