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DMN65D8L-VB Product details
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Product Introduction
**DMN65D8L-VB** is a single N-channel MOSFET designed with SOT23-3 package and Trench technology. This MOSFET can handle a maximum drain-source voltage (VDS) of 60V and provide stable performance at a drain current (ID) of 0.3A. Its moderate on-resistance and low gate threshold voltage make it suitable for low-power applications. The DMN65D8L-VB has a compact design and is suitable for use in circuits with strict size and power consumption requirements, providing reliable switching and control functions.
**DMN65D8L-VB** is a single N-channel MOSFET designed with SOT23-3 package and Trench technology. This MOSFET can handle a maximum drain-source voltage (VDS) of 60V and provide stable performance at a drain current (ID) of 0.3A. Its moderate on-resistance and low gate threshold voltage make it suitable for low-power applications. The DMN65D8L-VB has a compact design and is suitable for use in circuits with strict size and power consumption requirements, providing reliable switching and control functions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Detailed parameter description
- **Model**: DMN65D8L-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 0.3A
- **Technology**: Trench technology
- **Model**: DMN65D8L-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 0.3A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
**1. Low-power portable devices**: The DMN65D8L-VB is suitable for portable electronic devices that require miniaturization and low power consumption, such as smart watches, wireless headphones, and small sensors. These devices have strict requirements on the size and power consumption of the MOSFET, which can provide effective power switching and control functions.
**2. Low-current switching circuits**: In low-current switching applications such as LED driving and small power switches, the DMN65D8L-VB is able to provide stable switching control. Its moderate on-resistance is suitable for these low-power applications, ensuring efficient operation of the system.
**3. Small power management**: This MOSFET can be used in power management modules such as DC-DC converters and power switch modules. In these applications, the DMN65D8L-VB can effectively manage power conversion and control, adapting to the needs of miniaturization and efficient power management.
**4. Signal conditioning and protection circuits**: DMN65D8L-VB is also suitable for signal conditioning and protection circuits, such as analog signal switches and overcurrent protection circuits. Its low gate threshold voltage and stable conduction performance provide reliable signal processing and protection functions.
DMN65D8L-VB MOSFET is widely used in low-power electronic devices, power management and signal conditioning fields with its small package and stable performance, providing reliable switching and control solutions for these applications.
**1. Low-power portable devices**: The DMN65D8L-VB is suitable for portable electronic devices that require miniaturization and low power consumption, such as smart watches, wireless headphones, and small sensors. These devices have strict requirements on the size and power consumption of the MOSFET, which can provide effective power switching and control functions.
**2. Low-current switching circuits**: In low-current switching applications such as LED driving and small power switches, the DMN65D8L-VB is able to provide stable switching control. Its moderate on-resistance is suitable for these low-power applications, ensuring efficient operation of the system.
**3. Small power management**: This MOSFET can be used in power management modules such as DC-DC converters and power switch modules. In these applications, the DMN65D8L-VB can effectively manage power conversion and control, adapting to the needs of miniaturization and efficient power management.
**4. Signal conditioning and protection circuits**: DMN65D8L-VB is also suitable for signal conditioning and protection circuits, such as analog signal switches and overcurrent protection circuits. Its low gate threshold voltage and stable conduction performance provide reliable signal processing and protection functions.
DMN65D8L-VB MOSFET is widely used in low-power electronic devices, power management and signal conditioning fields with its small package and stable performance, providing reliable switching and control solutions for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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