Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-N |
60V |
20(±V) |
1.7V |
0.3A |
|
|
2800mΩ |
|
Detailed parameter description
- **Package**: SOT23-3
- **Configuration**: Unipolar N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ (at VGS=4.5V)
- 2800mΩ (at VGS=10V)
- **Maximum continuous leakage current (ID)**: 0.3A
- **Technology**: Trench
Domain and module applications:
Applicable fields and modules
**DMN65D8L-7-VB** MOSFET is suitable for the following fields and modules:
1. **Low-power switching applications**:
- Due to its moderate on-resistance and current capability, the DMN65D8L-7-VB is suitable for low-power switching applications such as power switches in mobile devices. This MOSFET can help control the power path, optimize power consumption and extend device battery life.
2. **Small circuits and consumer electronics**:
- In small electronic products and consumer electronic devices, such as smart home devices, sensor modules, etc., the DMN65D8L-7-VB can be used as a low-current switching element. Its small SOT23-3 package makes it suitable for space-limited applications, providing reliable switching performance.
3. **Battery-powered devices**:
- This MOSFET is also suitable for use in battery-powered devices such as handheld tools and portable electronics. It can work stably under battery power, helping to achieve effective current control and power management.
4. **Light load power management**:
- DMN65D8L-7-VB can be used in light load power management systems, such as battery chargers and small power modules. Although its on-resistance is relatively high, it can still provide effective switching control in low current applications.
In summary, **DMN65D8L-7-VB** MOSFET is suitable for low power switching, small electronic products, battery-powered devices, and light load power management due to its moderate current capability and high on-resistance, and can provide stable performance and reliable current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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