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DMN601K-VB Product details
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Product Introduction
**DMN601K-VB** is a single-channel N-Channel MOSFET in a compact SOT23-3 package. This MOSFET has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of up to ±20V. Its on-resistance (RDS(ON)) is 2800mΩ at VGS = 10V and 3100mΩ at VGS = 4.5V. The device supports a maximum drain current of 0.3A and uses Trench technology, making it suitable for low-power and space-constrained applications.
**DMN601K-VB** is a single-channel N-Channel MOSFET in a compact SOT23-3 package. This MOSFET has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of up to ±20V. Its on-resistance (RDS(ON)) is 2800mΩ at VGS = 10V and 3100mΩ at VGS = 4.5V. The device supports a maximum drain current of 0.3A and uses Trench technology, making it suitable for low-power and space-constrained applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Detailed parameter description
- **Package**: SOT23-3
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench
- **Package**: SOT23-3
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Low power switch**: The DMN601K-VB is suitable for low power switching applications such as small power switches or signal switches. Its compact SOT23-3 package is ideal for space-constrained board designs.
2. **Battery protection**: In battery management systems, this MOSFET can be used as an overcurrent or overvoltage protection switch to help ensure safe use of batteries. Its low on-resistance helps reduce power loss.
3. **Consumer electronics**: The DMN601K-VB is commonly used in a variety of consumer electronics products, such as power management for small handheld and portable devices, to provide reliable switching performance.
4. **Signal switch**: In signal switching applications, this MOSFET can effectively control the switching operation of low current signals to ensure the stability of signal transmission.
5. **Small motor drive**: In small motor drive circuits, DMN601K-VB can be used to drive low-power DC motors or stepper motors, providing an efficient switching solution for motor control systems.
1. **Low power switch**: The DMN601K-VB is suitable for low power switching applications such as small power switches or signal switches. Its compact SOT23-3 package is ideal for space-constrained board designs.
2. **Battery protection**: In battery management systems, this MOSFET can be used as an overcurrent or overvoltage protection switch to help ensure safe use of batteries. Its low on-resistance helps reduce power loss.
3. **Consumer electronics**: The DMN601K-VB is commonly used in a variety of consumer electronics products, such as power management for small handheld and portable devices, to provide reliable switching performance.
4. **Signal switch**: In signal switching applications, this MOSFET can effectively control the switching operation of low current signals to ensure the stability of signal transmission.
5. **Small motor drive**: In small motor drive circuits, DMN601K-VB can be used to drive low-power DC motors or stepper motors, providing an efficient switching solution for motor control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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