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DMN3112SSS-13-VB Product details

Product introduction:

Product Introduction



**DMN3112SSS-13-VB** is a high-performance N-Channel MOSFET in SOP8 package, designed for applications requiring high efficiency and high current handling capability. This MOSFET has a drain-source voltage (VDS) of 30V and a maximum continuous drain current (ID) of 13A, enabling it to operate stably under high load conditions. It uses advanced Trench technology to provide extremely low on-resistance (RDS(ON)), ensuring low power consumption and high efficiency. Its threshold voltage (Vth) is 1.7V, which is suitable for a variety of low-voltage drive applications and optimizes the balance between switching speed and power loss.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 13A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
Detailed parameter description



- **Package**: SOP8

- **Configuration**: Unipolar N-Channel

- **Drain-source voltage (VDS)**: 30V

- **Gate-source voltage (VGS)**: ±20V

- **Threshold voltage (Vth)**: 1.7V

- **On-resistance (RDS(ON))**:

- 11mΩ (at VGS=4.5V)

- 8mΩ (at VGS=10V)

- **Maximum continuous leakage current (ID)**: 13A

- **Technology**: Trench



Domain and module applications:

Applicable fields and modules



The characteristics of **DMN3112SSS-13-VB** MOSFET make it very suitable for the following fields and modules:



1. **Power management and DC-DC converter**:

- In the power management system, DMN3112SSS-13-VB can be used in DC-DC converters and regulators to provide efficient power conversion. Its low RDS(ON) characteristics can reduce power loss and improve overall system efficiency, suitable for portable devices, power supply modules and embedded systems.



2. **Load switch and battery management**:

- This MOSFET can be used as a load switch in portable devices such as smartphones, tablets and laptops. Its low on-resistance and high current capability make it suitable for battery charge and discharge management, optimizing battery efficiency and extending the battery life of the device.



3. **Motor Drive and Consumer Electronics**:

- In motor drive applications such as power tools, drones and home appliances, the DMN3112SSS-13-VB can handle high current loads to ensure stable and efficient motor operation. Its low RDS(ON) can improve the response speed and control accuracy of the motor, and is suitable for a variety of consumer electronics products.



4. **Automotive Electronics**:

- This MOSFET is suitable for low-voltage switching applications in automotive electronic modules, such as power windows, seat adjusters and interior lighting systems. Its high current handling capability and low on-resistance help ensure the stability and efficiency of automotive electronic systems, and are suitable for various automotive power management and load control functions.



In summary, the **DMN3112SSS-13-VB** MOSFET performs well in multiple application areas such as power management, load switching, motor drive and automotive electronics with its high current capability and low on-resistance, which can significantly improve system performance and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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