Product introduction:
Product Introduction
**DMG3415U-7-VB** is a unipolar P-channel MOSFET in a SOT23-3 package. The device has a maximum drain-to-source voltage (VDS) of -30V, which is suitable for medium and low voltage applications. The DMG3415U-7-VB uses Trench technology, has low on-resistance and a low threshold voltage (Vth is -1.7V), and provides different on-resistances at different gate drive voltages: when VGS=4.5V, RDS(ON) is 54mΩ, and when VGS=10V, RDS(ON) is 46mΩ. The maximum drain current (ID) of this MOSFET is -5.6A, making it an excellent performer in low-power applications, especially for scenarios that require efficient switching and low power consumption.
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Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-P |
-30V |
20(±V) |
-1.7V |
-5.6A |
|
|
46mΩ |
|
Detailed parameter description
- **Model**: DMG3415U-7-VB
- **Package**: SOT23-3
- **Configuration**: Unipolar P channel
- **Maximum drain to source voltage (VDS)**: -30V
- **Maximum gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ (VGS=4.5V)
- 46mΩ (VGS=10V)
- **Maximum drain current (ID)**: -5.6A
- **Technology**: Trench
Domain and module applications:
Applications and module examples
**DMG3415U-7-VB** is a high-efficiency P-channel MOSFET suitable for a variety of low-power and medium-voltage applications, including:
1. **Battery Management System**:
- In a battery management system, the DMG3415U-7-VB can be used as a load switch to control the charge and discharge path of the battery pack. Its low on-resistance reduces power loss and extends battery life while ensuring efficient current transfer.
2. **Portable Devices**:
- In portable devices such as smartphones and tablets, this MOSFET can be used in power management modules as a key component for voltage regulation and switching. Its small package and high efficiency make it suitable for efficient power management in limited space.
3. **Power Switching Circuit**:
- The DMG3415U-7-VB can be used in power switching circuits, especially in scenarios where efficient power switching through a P-channel MOSFET is required. Its low on-resistance ensures low power consumption and high efficiency during switching.
4. **LED Driver**:
- In LED drive circuits, this MOSFET can be used as a switching element to control the LED on and off. Its high current carrying capacity enables it to drive multiple LEDs, suitable for lighting and display applications.
5. **Voltage Converter**:
- In buck converters or level shifter circuits, the DMG3415U-7-VB can be used as a switching element to help achieve efficient voltage conversion and power regulation.
These applications demonstrate the wide applicability of the DMG3415U-7-VB in a variety of fields requiring high efficiency and low power consumption, especially in portable devices and battery-powered systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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