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CSD17303Q5-VB Product details

Product introduction:

Product Introduction



CSD17303Q5-VB is a high-performance N-channel MOSFET in a DFN8 (5x6) package combined with advanced Trench technology. This MOSFET has extremely low on-resistance and high current handling capability, making it ideal for high-efficiency power management applications. Its maximum drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) range is ±20V, and the gate threshold voltage (Vth) is 1.7V. The on-resistance (RDS(ON)) is 2.5mΩ at VGS=4.5V, 1.8mΩ at VGS=10V, and the maximum drain current (ID) is 160A. These features enable the CSD17303Q5-VB to excel in high-current and low-power applications.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 160A 1.8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 160A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 160A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
Detailed parameter description



1. **Package type**: DFN8(5x6)

2. **Configuration**: Single N-channel

3. **Drain-source voltage (VDS)**: 30V

4. **Gate-source voltage (VGS)**: ±20V

5. **Gate threshold voltage (Vth)**: 1.7V

6. **On-resistance (RDS(ON))**:

- 2.5mΩ @ VGS=4.5V

- 1.8mΩ @ VGS=10V

7. **Maximum drain current (ID)**: 160A

8. **Technology**: Trench



Domain and module applications:

Applications and Modules



The high current handling capability and low on-resistance of the CSD17303Q5-VB make it excellent in a variety of applications. Here are some typical application areas and modules of this product:



1. **High-efficiency DC-DC converter**: In high-efficiency DC-DC converter design, this MOSFET can be used as a switching element, providing low on-resistance and high switching efficiency, which is very suitable for power management in computer power supplies, communication equipment and various electronic devices.



2. **Power management system**: In power management systems, the CSD17303Q5-VB can be used as a power switch to optimize current flow, reduce power consumption and improve overall system efficiency. Its compact DFN package is particularly suitable for space-constrained designs.



3. **Battery management system**: In battery management systems, this MOSFET can effectively switch loads, prevent overcurrent and short-circuit conditions, and protect batteries from damage. Suitable for portable electronic devices and electric vehicles, etc.



4. **Power tools**: In the power circuit of power tools, CSD17303Q5-VB can be used as an efficient switching element to provide reliable power management and efficient energy conversion to ensure efficient operation of power tools.



5. **Automotive electronic systems**: In automotive electronic systems, this MOSFET can be used for power control and management to help improve the efficiency and reliability of automotive electrical systems. It is suitable for various power modules in electric vehicles, hybrid vehicles and traditional vehicles.



6. **Servers and storage devices**: In servers and storage devices, CSD17303Q5-VB can be used for efficient power management and energy conversion to help improve the energy efficiency and performance of data centers and storage systems.



Through these examples of application scenarios, CSD17303Q5-VB demonstrates its superior performance in high-efficiency, high-current and low-power designs, making it an ideal choice for various electronic devices and power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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