Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
|
13mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
|
|
II. Detailed parameter description of CSD16411Q3-VB
| Parameters| Description|
|------|------|
| Package| DFN8 (3x3mm) |
| Configuration| Single N-channel|
| Drain-source breakdown voltage (VDS) | 30V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 19mΩ @ VGS=4.5V
13mΩ @ VGS=10V |
| Continuous drain current (ID) | 30A |
| Technology| Trench |
Domain and module applications：
3. Application fields and modules of CSD16411Q3-VB
CSD16411Q3-VB MOSFET is suitable for the following main fields and modules due to its excellent electrical characteristics and compact package:
1. **Power management system**: In the high-efficiency power management system, CSD16411Q3-VB can be used for high-efficiency power switches and converters. Its low on-resistance and high current handling capability ensure high efficiency and low power consumption of the system, which is very suitable for use in DC-DC converters and AC-DC adapters.
2. **Portable devices**: Due to its small DFN8 (3x3mm) package, CSD16411Q3-VB is very suitable for power management applications in portable devices. These devices include smartphones, tablets and other mobile electronic products, and its high efficiency and small size ensure long battery life and reliability of the device.
3. **Load Switch**: In various electronic systems, CSD16411Q3-VB can be used as an efficient load switch. Its low on-resistance reduces energy loss during switching and improves the overall energy efficiency of the system, making it suitable for computers and communication equipment.
4. **Battery Management System**: In battery management systems, this MOSFET can be used for battery protection and load switching. Its high current capability and low on-resistance help improve the efficiency of battery management systems and ensure the safety and stability of batteries during charging and discharging.
5. **Consumer Electronics**: CSD16411Q3-VB is suitable for power management applications in various consumer electronic products, such as TVs, audio systems, and home appliances. Its high performance and reliability ensure stable operation of these devices under high load conditions.
In summary, the CSD16411Q3-VB MOSFET, with its high performance and compact design, is suitable for various applications that require high current, high performance and small package, meeting the strict requirements of modern electronic devices on performance and size.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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