Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
60A |
|
|
3.9mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package type**: DFN8(3x3)
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 5mΩ @ VGS=4.5V
- 3.9mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 60A
8. **Technology**: Trench
Domain and module applications:
Applications and Modules
The high current handling capability and low on-resistance of the CSD16406Q3-VB enable it to excel in multiple application areas. Here are some typical application areas and modules for this product:
1. **DC-DC Converter**: In DC-DC converter designs, this MOSFET can be used as a switching element, providing low on-resistance and high switching efficiency, suitable for power management in computer power supplies, communication equipment, and various electronic devices.
2. **Power Management**: In power management applications, the CSD16406Q3-VB can be used as a power switch to optimize current flow, reduce power consumption, and improve overall system efficiency. Its compact DFN package is particularly suitable for space-constrained designs.
3. **Battery Protection**: In battery protection circuits, this MOSFET can effectively switch loads, prevent overcurrent and short-circuit conditions, and protect batteries from damage. Suitable for portable electronic devices, electric vehicles, etc.
4. **LED Driver**: In LED driver circuits, CSD16406Q3-VB can be used as an efficient switching element to control the brightness and switching of LEDs, suitable for various lighting applications.
5. **High-Efficiency Switch**: In various high-efficiency switching applications, such as power amplifiers and motor drive circuits, CSD16406Q3-VB provides low on-resistance and high current handling capabilities to ensure the reliability and efficiency of switching operations.
6. **Portable Electronic Devices**: In portable devices such as smartphones and tablets, this MOSFET can be used as a power management switch to help improve the energy efficiency of the device and extend battery life.
Through these application scenario examples, CSD16406Q3-VB demonstrates its superior performance in high-efficiency, high-current and low-power designs, making it an ideal choice for various electronic devices and power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours