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CSD16406Q3-VB Product details

Product introduction:

Product Introduction



CSD16406Q3-VB is a high-performance N-channel MOSFET packaged in DFN8 (3x3) and using advanced Trench technology. It has extremely low on-resistance and high current handling capability, making it suitable for a variety of high-efficiency power management applications. The MOSFET can withstand a drain-source voltage (VDS) of up to 30V, a gate-source voltage (VGS) range of ±20V, and a gate threshold voltage (Vth) of 1.7V. Its on-resistance (RDS(ON)) is 5mΩ at VGS=4.5V, 3.9mΩ at VGS=10V, and a maximum drain current (ID) of 60A. This gives the CSD16406Q3-VB superior performance in high current and low power applications.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 1.7V 60A 3.9mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 30V 1.7V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 30V 1.7V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
Detailed parameter description



1. **Package type**: DFN8(3x3)

2. **Configuration**: Single N-channel

3. **Drain-source voltage (VDS)**: 30V

4. **Gate-source voltage (VGS)**: ±20V

5. **Gate threshold voltage (Vth)**: 1.7V

6. **On-resistance (RDS(ON))**:

- 5mΩ @ VGS=4.5V

- 3.9mΩ @ VGS=10V

7. **Maximum drain current (ID)**: 60A

8. **Technology**: Trench



Domain and module applications:

Applications and Modules



The high current handling capability and low on-resistance of the CSD16406Q3-VB enable it to excel in multiple application areas. Here are some typical application areas and modules for this product:



1. **DC-DC Converter**: In DC-DC converter designs, this MOSFET can be used as a switching element, providing low on-resistance and high switching efficiency, suitable for power management in computer power supplies, communication equipment, and various electronic devices.



2. **Power Management**: In power management applications, the CSD16406Q3-VB can be used as a power switch to optimize current flow, reduce power consumption, and improve overall system efficiency. Its compact DFN package is particularly suitable for space-constrained designs.



3. **Battery Protection**: In battery protection circuits, this MOSFET can effectively switch loads, prevent overcurrent and short-circuit conditions, and protect batteries from damage. Suitable for portable electronic devices, electric vehicles, etc.



4. **LED Driver**: In LED driver circuits, CSD16406Q3-VB can be used as an efficient switching element to control the brightness and switching of LEDs, suitable for various lighting applications.



5. **High-Efficiency Switch**: In various high-efficiency switching applications, such as power amplifiers and motor drive circuits, CSD16406Q3-VB provides low on-resistance and high current handling capabilities to ensure the reliability and efficiency of switching operations.



6. **Portable Electronic Devices**: In portable devices such as smartphones and tablets, this MOSFET can be used as a power management switch to help improve the energy efficiency of the device and extend battery life.



Through these application scenario examples, CSD16406Q3-VB demonstrates its superior performance in high-efficiency, high-current and low-power designs, making it an ideal choice for various electronic devices and power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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