Featured Model

Your present location > Home page > Featured Model

CS75N75B8H-VB Product details

Product introduction:

1. Product Introduction



**CS75N75B8H-VB** is a high-performance single N-channel MOSFET manufactured using advanced Trench technology. The device is packaged in TO220 and has excellent switching performance and low on-resistance. The main specifications include a maximum drain-source voltage of 80V, a gate drive voltage of ±20V, and a threshold voltage of 3V. The on-resistance (RDS(ON)) is 9mΩ at VGS=4.5V and 7mΩ at VGS=10V, and the maximum continuous drain current is 100A. These characteristics make the CS75N75B8H-VB particularly suitable for high-power applications that require high current handling capability and low conduction losses.



File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 80V 3V 100A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
II. Detailed parameter description



| Parameter name| Parameter value|

|------------------|------------------------|

| Package type| TO220 |

| Configuration| Single N-channel|

| Drain-source voltage (VDS) | 80V |

| Gate drive voltage (VGS) | ±20V |

| Threshold voltage (Vth) | 3V |

| On-resistance (RDS(ON)) | 9mΩ @ VGS=4.5V |

| | 7mΩ @ VGS=10V |

| Continuous drain current (ID) | 100A |

| Technology| Trench |



Domain and module applications:

3. Application fields and module examples



**CS75N75B8H-VB** MOSFET is suitable for the following fields and modules due to its high current handling capability and low on-resistance:



1. **Power supply**

- As the main switching element in high-power power supply, it provides efficient current control and low-loss switching operation to ensure stable output and high-efficiency performance of the power supply.



2. **Motor drive system**

- Used as a switch to control current in the motor drive system, supports high current drive, and is suitable for starting, stopping and speed regulation of high-power motors.



3. **DC-DC converter**

- As a switching element in the DC-DC converter, it realizes efficient voltage conversion and current management, improves conversion efficiency and reduces energy loss.



4. **Power management**

- Used in various power management modules, provides efficient current switching and control, optimizes power distribution, and ensures system stability and high efficiency.



5. **Automotive Electronics**

- In automotive electronic systems, it is used as a high current switching element in power management and drive systems, providing efficient current control and stable performance, and is suitable for high-power modules in automotive electrical systems.



**CS75N75B8H-VB** MOSFET is suitable for applications requiring high power and high efficiency due to its high current carrying capacity and low on-resistance, which can significantly improve the overall performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat