Product introduction：
CHM8401JPT-VB MOSFET Product Introduction
CHM8401JPT-VB is a dual N-channel and P-channel MOSFET combination in SOP8 package, suitable for various power switching and power management applications. The MOSFET has a drain-source voltage (VDS) of ±30V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.8V and -1.7V for the N-channel and P-channel MOSFETs, respectively. When the gate-source voltage is 10V, the on-resistance (RDS(ON)) of the N-channel MOSFET is 11mΩ, the on-resistance (RDS(ON)) of the P-channel MOSFET is 21mΩ, the maximum drain current of the N-channel MOSFET is 10A, and the maximum drain current of the P-channel MOSFET is -8A. The CHM8401JPT-VB uses advanced trench technology to provide high efficiency and low power consumption performance.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.8/-1.7V |
10/-8A |
|
|
11/21mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.8/-1.7V |
10/-8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.8/-1.7V |
10/-8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
CHM8401JPT-VB MOSFET Detailed parameter description
1. **Package**
- **Type**: SOP8
2. **Configuration**
- **Type**: Dual N-channel and P-channel
3. **Electrical parameters**
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**
- **N-channel**: 1.8V
- **P-channel**: -1.7V
4. **On-resistance**
- **N-channel**
- **RDS(ON) @ VGS=4.5V**: 13mΩ
- **RDS(ON) @ VGS=10V**: 11mΩ
- **P-channel**
- **RDS(ON) @ VGS=4.5V**: 28mΩ
- **RDS(ON) @ VGS=10V**: 21mΩ
5. **Current**
- **N-channel maximum drain current (ID)**: 10A
- **P-channel maximum drain current (ID)**: -8A
6. **Technology**
- **Manufacturing process**: Trench technology
Domain and module applications：
CHM8401JPT-VB MOSFET Applications and Modules
1. **Power Switch**
- **Application Examples**: CHM8401JPT-VB MOSFET can be widely used in power switch modules, such as power management systems and power adapters. The dual MOSFET configuration enables it to handle positive and negative power switches, suitable for switching and controlling various voltage power supplies, and improve the overall efficiency and stability of the system.
2. **Motor Control**
- **Application Examples**: In motor control systems, CHM8401JPT-VB MOSFET is suitable for electric vehicles and industrial motor drive modules. The combination of N-channel and P-channel MOSFETs can provide bidirectional control, which is suitable for motor forward and reverse control and speed regulation.
3. **Load Switch**
- **Application Examples**: CHM8401JPT-VB MOSFET is very suitable for load switch applications, such as load switches in battery management systems. N-channel MOSFET can be used for low-side switches, and P-channel MOSFET can be used for high-side switches to achieve effective control of the load.
4. **Battery protection**
- **Application examples**: In the battery protection circuit, CHM8401JPT-VB MOSFET can be used for overvoltage and overcurrent protection. The combination of N-channel and P-channel MOSFETs allows switching under different operating conditions to protect the battery from damage.
5. **High-efficiency switching power supply**
- **Application examples**: CHM8401JPT-VB MOSFET is suitable for high-efficiency switching power supply (SMPS) design, such as AC-DC and DC-DC converters. Its low on-resistance and high current handling capability ensure high efficiency and low power consumption in switching operation.
With its dual-channel design, high current handling capability and low on-resistance, CHM8401JPT-VB MOSFET is widely used in various power management and power control applications, providing efficient and reliable solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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