Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
250V |
|
3.5V |
14A |
|
|
190mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
250V |
|
3.5V |
14A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
250V |
|
3.5V |
14A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **VDS (drain-source voltage): ** 250V
The maximum drain-source voltage is 250V, which is suitable for high voltage applications and can work stably in high voltage environments to ensure system reliability.
- **VGS (gate-source voltage): ** ±20V
The maximum gate-source voltage is ±20V, which provides good gate drive stability and flexibility to meet various circuit design requirements.
- **Vth (threshold voltage): ** 3.5V
The threshold voltage is 3.5V, which is suitable for applications with medium and high threshold voltage requirements, ensuring that the MOSFET can be turned on quickly when needed.
- **RDS(ON) (drain-source on-resistance): **
- 190mΩ @ VGS=10V
When the gate-source voltage is 10V, the on-resistance is 190mΩ, which provides a lower on-resistance, reduces energy loss, and improves system efficiency.
- **ID (Continuous Drain Current): ** 14A
With a maximum continuous drain current of 14A, it can handle higher current loads and is suitable for applications that require higher current handling capabilities.
Domain and module applications：
Application Examples
The high voltage and high current handling capabilities of the CEPF634-VB MOSFET enable it to excel in a variety of applications. Here are some typical applications:
1. **High Voltage Power Switch:**
- In high voltage power switch applications, the high drain-source voltage and low on-resistance of the CEPF634-VB make it very suitable for switching and controlling high voltage power supplies, providing reliable switching operations and improving system efficiency.
2. **Industrial Power Control:**
- In industrial power control systems, the high voltage and current handling capabilities of this MOSFET are suitable for a variety of power switching and control applications, such as motor drives and power distribution systems, ensuring efficient operation and stability of the system.
3. **Power Inverter:**
- In power inverter applications, the high voltage capability and good switching performance of the CEPF634-VB make it suitable for high voltage DC-AC inverters, providing efficient power conversion and stable operating performance.
4. **High-voltage power amplifier:**
- In high-voltage power amplifiers, CEPФ634-VB is able to handle high voltage and current, suitable for high-power amplifiers and RF applications, providing stable power output and efficient performance.
5. **Battery management system:**
- In battery management systems, the high voltage and current handling capabilities of this MOSFET are suitable for the protection and management of high-voltage battery packs, ensuring the safety and efficiency of the battery system.
With its high voltage and high current handling capabilities, CEPF634-VB MOSFET is an ideal choice in high-voltage power switches and control systems, providing a reliable solution for a variety of high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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