Product introduction：
1. CEP75N06-VB Product Introduction
CEP75N06-VB is a high-efficiency single N-channel MOSFET in TO220 package, suitable for various high current and medium voltage electronic applications. The MOSFET has a maximum drain-source voltage (VDS) of 60V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. CEP75N06-VB uses advanced Trench technology, which can achieve extremely low on-resistance (RDS(ON)), thereby improving current handling capability and reducing power consumption. This makes CEP75N06-VB excel in applications such as power management, DC-DC conversion, motor drive, and load switching.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
60A |
|
|
11mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
II. Detailed parameter description of CEP75N06-VB
| Parameters| Specifications|
|-----------------|---------------------------|
| Package type| TO220 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 60V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 13mΩ @ VGS=4.5V |
| On-resistance (RDS(ON)) | 11mΩ @ VGS=10V |
| Continuous drain current (ID) | 60A |
| Technology| Trench |
Domain and module applications：
III. Applications and Module Examples
1. **Power Management**:
The low on-resistance and high current handling capability of the CEP75N06-VB make it very effective in power management systems. It can be used as an efficient switching element in power switches and protection circuits to optimize the efficiency of the power system and reduce power consumption.
2. **DC-DC Converter**:
In a DC-DC converter, the CEP75N06-VB is able to handle high currents and maintain low on-resistance when used as a switching element. This helps improve the overall efficiency and stability of the converter, especially for applications that require high power output.
3. **Motor Drive**:
The high current capability and low RDS(ON) characteristics of this MOSFET make it very suitable for use as a switching element in motor drive systems. It can efficiently control the drive of a DC motor or stepper motor to ensure efficient operation of the system.
4. **Load Switch**:
In load switch applications, CEP75N06-VB is able to stably handle high current loads. Its excellent conduction performance and low power consumption make it an ideal choice for various industrial and consumer electronic load switch modules.
5. **Power Management System**:
The low on-resistance and high current handling capability of CEP75N06-VB make it outstanding in power management systems. It can effectively manage power flow and improve system efficiency, and is widely used in high-efficiency power management and regulation systems.
In short, with its high current handling capability and low power consumption, CEP75N06-VB provides efficient and reliable solutions for power management, DC-DC conversion, load switching and motor drive.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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